Paper
23 March 2012 Development of EUV lithography tool technologies at Nikon
Katsuhiko Murakami, Tetsuya Oshino, Hiroyuki Kondo, Hiroshi Chiba, Yoshio Kawabe, Takuro Ono, Noriaki Kandaka, Atsushi Yamazaki, Takashi Yamaguchi, Ryo Shibata, Masayuki Shiraishi
Author Affiliations +
Abstract
6-mirror-system EUV projection optics design with NA of 0.4 plus was improved and the residual wavefront error was much reduced. Apodization is an issue for such high-NA EUV projection optics. Broad-band multilayer mirror can solve the problem. Broad-band multilayer mirrors were developed. Measured reflectivity performance of these multilayers was in good agreement with the designed performance. We have decided the measures to control contaminations of optics in HVM EUV exposure tools.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katsuhiko Murakami, Tetsuya Oshino, Hiroyuki Kondo, Hiroshi Chiba, Yoshio Kawabe, Takuro Ono, Noriaki Kandaka, Atsushi Yamazaki, Takashi Yamaguchi, Ryo Shibata, and Masayuki Shiraishi "Development of EUV lithography tool technologies at Nikon", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832215 (23 March 2012); https://doi.org/10.1117/12.917676
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Cited by 5 scholarly publications.
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KEYWORDS
Extreme ultraviolet lithography

Mirrors

Contamination

Extreme ultraviolet

Multilayers

Reflectivity

Carbon

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