A full band Monte-Carlo study of carrier transport properties of InAlN lattice matched to GaN

Sara Shishehchi; Francesco Bertazzi; Enrico Bellotti

doi:10.1117/12.2008734

14 March 2013 A full band Monte-Carlo study of carrier transport properties of InAlN lattice matched to GaN

Sara Shishehchi, Francesco Bertazzi, Enrico Bellotti

Proceedings Volume 8619, Physics and Simulation of Optoelectronic Devices XXI; 86190H (2013) https://doi.org/10.1117/12.2008734
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

The growing importance of In_0:18Al_0:82N stems from the fact that it can be grown lattice matched to GaN and for its potential applications in a large number of electronics and optoelectronics devices. In this work we employed a full band Monte-Carlo approach to study the carrier transport properties of this alloy. We have computed the temperature and doping dependent electron and hole mobilities and drift velocities. Furthermore, for both sets of transport coefficients we have developed a number of analytical expressions that can be easily incorporated in drift-diffusion type simulation codes.

Citation Download Citation

Sara Shishehchi, Francesco Bertazzi, and Enrico Bellotti "A full band Monte-Carlo study of carrier transport properties of InAlN lattice matched to GaN", Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 86190H (14 March 2013); https://doi.org/10.1117/12.2008734

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