Hybrid lithography for triple patterning decomposition and E-beam lithography

Haitong Tian; Hongbo Zhang; Zigang Xiao; Martin D. F. Wong

doi:10.1117/12.2046499

31 March 2014 Hybrid lithography for triple patterning decomposition and E-beam lithography

Haitong Tian, Hongbo Zhang, Zigang Xiao, Martin D. F. Wong

Proceedings Volume 9052, Optical Microlithography XXVII; 90520P (2014) https://doi.org/10.1117/12.2046499
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

As we advances into 14/10nm technology node, single patterning technology is far from enough to fabricate the features with shrinking feature size. According to International Technology Roadmap for Semiconductors in 2011,¹double patterning lithography is already available for massive productions in industry for sub-32nm half pitch technology node. For 14/10nm technology node, double patterning begins to show its limitations as it uses too many stitches to resolve the native coloring conflicts. Stitches will increase the manufacturing cost, lead to potential functional errors of the chip, and cause the yield lost. Triple patterning lithography and E-Beam lithography are two emerging techniques to beat the diffraction limit for current optical lithography system. In this paper, we investigate combining the merits of triple patterning lithography and E-Beam lithography for standard cell based designs. We devise an approach to compute a stitch free decomposition with the optimal number of E-Beam shots for row structure layout. The approach is expected to highlight the necessity and advantages of using hybrid lithography for advanced technology node.

Citation Download Citation

Haitong Tian, Hongbo Zhang, Zigang Xiao, and Martin D. F. Wong "Hybrid lithography for triple patterning decomposition and E-beam lithography", Proc. SPIE 9052, Optical Microlithography XXVII, 90520P (31 March 2014); https://doi.org/10.1117/12.2046499

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