32-element beta detector developed at the Institute of Electron Technology (ITE)

Maciej Węgrzecki; Alexander Yakushev; Jan Bar; Tadeusz Budzyński; Piotr Grabiec; Helena Kłos; Andrzej Panas; Wojciech Słysz; Maciej Stolarski; Dariusz Szmigiel; Iwona Węgrzecka; Michał Zaborowski

doi:10.1117/12.2070036

19 August 2014 32-element beta detector developed at the Institute of Electron Technology (ITE)

Maciej Węgrzecki, Alexander Yakushev, Jan Bar, Tadeusz Budzyński, Piotr Grabiec, Helena Kłos, Andrzej Panas, Wojciech Słysz, Maciej Stolarski, Dariusz Szmigiel, Iwona Węgrzecka, Michał Zaborowski

Author Affiliations +

Proceedings Volume 9291, 13th International Scientific Conference on Optical Sensors and Electronic Sensors; 929106 (2014) https://doi.org/10.1117/12.2070036
Event: 13th International Scientific Conference on Optical Sensors and Electronic Sensors, 2014, Lodz, Poland

Abstract

The paper presents the design, technology and parameters of a new .silicon detector for detection of electrons (below named as beta detector) developed at the Institute of Electron Technology (ITE). The detector will be used for research on transactinide elements at the GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (GSI). The detector consists of a monolithic 32-element array with an active area diameter of 90 mm and a thickness of 0.9 mm. The starting material is a high-resistivity ν silicon wafer (5 kΩcm resistivity). 32 planar p⁺-ν junctions are formed by boron diffusion on the top side of the wafer. On the bottom side, an n⁺ region, which forms a common cathode, is formed on the entire surface by phosphorus diffusion. The array is mounted on a special epoxy-glass laminate substrate, copper-clad on both sides. Two model detectors have been fabricated and studied. Very good electrical parameters have been achieved. For the first array, with supply voltage V_R = 20 V, the minimum dark current was 8 nA, the maximum dark current 97.1 nA, and the average dark current 25.1 nA. For the second array, it was 11.5 nA, 378.8 nA and 40.0 nA respectively.

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Maciej Węgrzecki, Alexander Yakushev, Jan Bar, Tadeusz Budzyński, Piotr Grabiec, Helena Kłos, Andrzej Panas, Wojciech Słysz, Maciej Stolarski, Dariusz Szmigiel, Iwona Węgrzecka, and Michał Zaborowski "32-element beta detector developed at the Institute of Electron Technology (ITE)", Proc. SPIE 9291, 13th International Scientific Conference on Optical Sensors and Electronic Sensors, 929106 (19 August 2014); https://doi.org/10.1117/12.2070036

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