Accelerated technology development by the use of critical point imaging SEM

Dominique Sanchez; Benôit Hinschberger; Loemba Bouckou; Olivier Moreau; Paolo Parisi

doi:10.1117/12.2073889

19 March 2015 Accelerated technology development by the use of critical point imaging SEM

Dominique Sanchez, Benôit Hinschberger, Loemba Bouckou, Olivier Moreau, Paolo Parisi

Proceedings Volume 9424, Metrology, Inspection, and Process Control for Microlithography XXIX; 94242H (2015) https://doi.org/10.1117/12.2073889
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

In order to optimize the time to market of the newest technology nodes and maximize their profitability, advanced semiconductor manufacturers need to adapt their yield enhancement strategies to their current development stage. During very early development, gross Defectivity at some critical process steps often makes it impractical to use broadband plasma or laser scanning micro-defect patterned wafer inspection techniques: such sensitive defect inspections capture a large number of defects, producing wafer defect maps so heavily populated that even wafer level signature are difficult to visualize.

Citation Download Citation

Dominique Sanchez, Benôit Hinschberger, Loemba Bouckou, Olivier Moreau, and Paolo Parisi "Accelerated technology development by the use of critical point imaging SEM", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94242H (19 March 2015); https://doi.org/10.1117/12.2073889

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