Paper
18 December 2014 Study of growth kinetics of amorphous carbon nanopillars formed by PECVD
D. Gromov, N. Borgardt, Y. Grishina, A. Dedkova, E. Kirilenko, S. Dubkov
Author Affiliations +
Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 94400D (2014) https://doi.org/10.1117/12.2179765
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation
Abstract
In this paper we study the process of plasma enhanced chemical vapor deposition (PECVD) of carbon nanostructures in the form of a film, the pillars, the flakes at a temperature of 100-350 °C from the vapor-gas mixture H2+CO+Ar. Also in the paper presents the structural features of the carbon nanopillars obtained at 250 °C. Determined mechanical stresses occurring during the growth of carbon nanostructures. Investigated the features of the growth of carbon pillars and proposed a phenomenological description of the process of their formation during PECVD process.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Gromov, N. Borgardt, Y. Grishina, A. Dedkova, E. Kirilenko, and S. Dubkov "Study of growth kinetics of amorphous carbon nanopillars formed by PECVD", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400D (18 December 2014); https://doi.org/10.1117/12.2179765
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KEYWORDS
Carbon

Nanostructures

Plasma enhanced chemical vapor deposition

Silicon

Chemical vapor deposition

Deposition processes

Semiconducting wafers

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