Natalia Davydova,1 Airat Galiullin,1 Cyrus Tabery,1 Bram Slachter,1 Adam Lyons,2 Jeremy Chen,1 Nick Pellenshttps://orcid.org/0000-0001-5527-5130,3 Vincent Wiaux,3 Tatiana Kovalevich,3 Lieve van Look,3 Ataklti Weldeslassie,3 Joost Bekaert3
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High NA anamorphic EUV scanner has anamorphic optics with 8x demagnification in y direction and thus twice smaller exposure fields 26x16.5 mm2. In-die stitching may be required in order to create dies larger than High NA exposure field. In this work we consider stitching of vertical lines and spaces (LS) and establish methodology of stitching evaluation including detailed contour metrology at stitch, across wafer performance, process window and contrast metrics and sensitivity to single layer overlay between two stitched fields.
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Natalia Davydova, Airat Galiullin, Cyrus Tabery, Bram Slachter, Adam Lyons, Jeremy Chen, Nick Pellens, Vincent Wiaux, Tatiana Kovalevich, Lieve van Look, Ataklti Weldeslassie, Joost Bekaert, "High-NA stitching: how to evaluate performance?," Proc. SPIE PC13215, International Conference on Extreme Ultraviolet Lithography 2024, PC132150A (13 November 2024); https://doi.org/10.1117/12.3038962