Estimating extremely low probability of stochastic defect in extreme ultraviolet lithography from critical dimension distribution measurement

Hiroshi Fukuda; Yoshinori Momonoi; Kei Sakai

doi:10.1117/1.JMM.18.2.024002

3 May 2019 Estimating extremely low probability of stochastic defect in extreme ultraviolet lithography from critical dimension distribution measurement

Hiroshi Fukuda, Yoshinori Momonoi, Kei Sakai

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 18, Issue 2, 024002 (May 2019). https://doi.org/10.1117/1.JMM.18.2.024002

Abstract

Projection lithography using extreme ultraviolet (EUV) light at 13.5-nm wavelength will be applied to the production of integrated circuits below 7-nm design rules. In pursuit of further miniaturization, however, stochastic pattern defect problems have arisen, and monitoring such defect generation probabilities in extremely low range (<^{10 − 10}) is indispensable. We discuss a method for predicting stochastic defect probabilities from a histogram of feature sizes for patterns several orders of magnitude fewer than the number of features to inspect. Based on our previously introduced probabilistic model of stochastic pattern defect, the defect probability is expressed as the product sum of the probability for edge position and the probability that film defect covers the area between edges, and we describe the latter as a function of edge position. The defect probabilities in the order between ^{10 − 7} and ^{10 − 5} were predicted from 10⁵ measurement data for real EUV-exposed wafers, suggesting the effectiveness of the model and its potential for defect inspection.

CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

Citation Download Citation

Hiroshi Fukuda, Yoshinori Momonoi, and Kei Sakai "Estimating extremely low probability of stochastic defect in extreme ultraviolet lithography from critical dimension distribution measurement," Journal of Micro/Nanolithography, MEMS, and MOEMS 18(2), 024002 (3 May 2019). https://doi.org/10.1117/1.JMM.18.2.024002

Received: 29 January 2019; Accepted: 12 April 2019; Published: 3 May 2019

ACCESS THE FULL ARTICLE

JOURNAL ARTICLE
5 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY