We present experimental results that show how diode-pumped Tm:YLF can be used to develop the next generation of lasers with high peak and high average power. We demonstrate the production of broad bandwidth, λ≈ 1.9 μm wavelength, high energy pulses with up to 1.6 J output energy and subsequent compression to sub-300 fs duration. This was achieved using a single 8-pass amplifier to boost stretched approximately 50 μJ pulses to the Joule-level. Furthermore, we show the average power capability of this material in a helium gas-cooled amplifier head, achieving a heat removal rate almost ten times higher than the state-of-the-art, surpassing 20 W/cm2. These demonstrations illustrate the capabilities of directly diode-pumped Tm:YLF to support TW to PW-class lasers at kW average power.
We will present our recent advances in identifying, understanding, and suppressing ns laser damage precursors in IBS produced dielectric films under UV, pulsed laser exposure. Model systems of single layer, layer pairs, and MLD coatings of silica, hafnia, scandia, and alumina were investigated. Through materials characterization, laser damage testing and simulations, we revealed that entrapped nanobubbles were important low fluence laser damage precursors. We further demonstrated that the identified precursors could be suppressed by either post low pressure thermal annealing or the manipulation of deposition process including using different sputtering gases to achieve ns UV-laser damage resistant dielectric coatings.
We compare the 355 nm, 45º AOI p-pol 8 n-s laser damage performance of standing-wave hafnia single layers fabricated using argon and xenon as working gas. A suite of metrology tools has been employed to understand the structural, chemical and paramagnetic defect states in the two films. The resultant films from the xenon deposition process are highly dense and have high 3w laser damage performance.
It is well known that dielectric coatings used in high energy laser systems for beam steering are susceptible to laser damage. The laser damage ensued in high refractive index materials, such as hafnia, is responsible for limiting the laser operation fluence and lifetime. Although hafnia is an ideal high refractive index material used in dielectric coatings for a broad range of laser wavelengths, defects developed during the deposition process leads to laser-induced damage. In order to increase the resistance to laser damage and improve laser performance, it is imperative to understand the underlying physics of laser damage in high index coating materials. Earlier work observed a substantial difference in laser damage thresholds for hafnia coatings produced by different deposition methods, yet the underlying mechanisms for the observed difference remains elusive. In this work we investigated the responses of single layer hafnia films produced by two deposition processes, electron beam (e-beam) evaporation and ion beam sputtering (IBS) methods upon UV ns-laser exposure. The films underwent laser damage testing using a 1-on-1 laser damage testing protocol with a beam size of 650 µm (1/e2) at 355 nm and 8 ns pulse duration. Both S and P polarizations were tested at a 45° angle of incidence. Chemical, structural and morphological characterizations of the films both pre- and post-laser damage were performed using Rutherford backscattering spectroscopy, glancing incidence X-Ray diffraction, and optical and scanning/transmission electron microscopy. We found that films deposited from the e-beam process had a higher damage onset threshold (4.4 +/- 0.1 J/cm2) than those deposited by IBS method (2.1 +/- 0.2 J/cm2). Furthermore, a polarization-dependent damage threshold onset was observed for the e-beam evaporated coatings but was not observed in IBS films. Although the typical size of the damage in general is larger for the e-beam produced films, the morphology shows similar foamy appearance in both films. The density of the damage sites, on the other hand, was much greater in the IBS produced films than that by the e-beam method. The observed difference can be attributed to their resulting structural/textural differences inherited in each method: porous in the e-beam films and dense with isolated nanobubbles in the IBS films, which can lead to a large difference in laser-defect coupling. The underlying physical mechanism will be discussed in detail.
This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344. IM Release# LLNL-ABS-809117
We compare the 355 nm, 45º AOI p-pol 8 n-s laser damage performance of standing-wave hafnia single layers fabricated under the same conditions and annealed under different temperatures. An intriguing trend is observed in the laser damage performance with respect to annealing temperature, with a notable performance increase observed in the sample annealed at 250º C. Chemical compositional analysis via Rutherford Backscatter spectroscopy (RBS) indicates that annealing induces sub-stoichiometric hafnia films for high temperature annealing.
We compare the distribution of hafnia chemistries as a function of sun and planet position in an ion beam sputtering system. Hafnia film chemistries were investigated both without and with planetary rotation. In the former case, the film thickness, stoichiometries and entrapped argon varied drastically as a function of sun position, with one sun position exhibiting high entrapped argon content. With full planetary rotation used during deposition, the film stoichiometry is nearly ideal with 6% entrapped argon content. It is observed that the center of the planets is an exception, with a slightly metallic stoichiometry and high entrapped argon. Interestingly, all hafnia optical films produced in this study exhibit an inverse relationship between oxygen content and entrapped argon.
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