Prof. Guoqiang Yang Profile

Prof. Guoqiang Yang

at Institute of Chemistry

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Publications (2)

SPIE Journal Paper | 11 July 2024

Nonchemically amplified molecular resist based on multi-sulfonium modified triptycene for electron beam and extreme ultraviolet lithography

Xiaodong Yuan, Jinping Chen, Tianjun Yu, Yi Zeng, Xudong Guo, Shuangqing Wang, Rui Hu, Peng Tian, Michaela Vockenhuber, Dimitrios Kazazis, Yasin Ekinci, Jun Zhao, Yanqing Wu, Guoqiang Yang, Yi Li

JM3, Vol. 23, Issue 03, 034601, (July 2024) https://doi.org/10.1117/12.10.1117/1.JMM.23.3.034601

KEYWORDS: Extreme ultraviolet lithography, Electron beam lithography, Lithography, Line edge roughness, Film thickness, Etching, Scanning electron microscopy, Solubility, Line width roughness, Molecules

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BackgroundTraditional chemically amplified resists (CARs) often suffer from high line-edge roughness (LER), primarily due to acid diffusion and the uneven distribution of reactive components. Nonchemically amplified resists (n-CARs) emerge as a promising solution to overcome the limitations. Molecular glasses (MGs), a type of organic compounds known for their distinct and well-defined structures, are particularly noteworthy for their homogeneity. The innovative design of MG-based n-CARs represents a significant stride toward overcoming the limitations inherent in CAR systems.AimDevelopment and performance evaluation of n-CARs utilizing the multi-sulfonium modified triptycene molecule for advanced lithography techniques, such as electron beam lithography (EBL) and extreme ultraviolet lithography (EUVL).ApproachA multi-sulfonium modified triptycene (TPESF6) was synthesized and characterized. This compound undergoes a photochemical reaction in which the sulfonium groups are transformed into thioethers, resulting in a substantial switch in polarity and thereby in solubility. The lithography performance of the TPESF6 resist was evaluated by EBL and EUVL. The lithographic patterns were analyzed by scanning electron microscopy and atomic force microscopy.ResultsTPESF6 resist demonstrated remarkable performance in EBL, achieving a 20 nm line/space (L/S) patterns as a negative-tone resist developed by water. Further evaluations using EUVL yielded an impressive 13 nm L/S pattern at a dose of 372.6 mJ/cm2 with a very low LER of 1.8 nm. Mechanistic studies show that the change in solubility of TPESF6 resist depends on the decomposition of the sulfonium cation and triflate anion groups.ConclusionsThe TPESF6 molecular resist shows high resolution and low LER, as evidenced by tests conducted using both EBL and EUVL. The integration of MG resist characteristics with the concept of n-CARs significantly improves the resolution and reduces the LER, offering a promising pathway for high-performance materials for advanced lithography.

SPIE Journal Paper | 2 June 2022

Water developable non-chemically amplified photoresist for electron beam and extreme ultraviolet lithography

Zhihao Wang, Jinping Chen, Tianjun Yu, Yi Zeng, Guoqiang Yang, Timothée Allenet, Michaela Vockenhuber, Yasin Ekinci, Yi Li

JM3, Vol. 21, Issue 04, 041403, (June 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.4.041403

KEYWORDS: Photoresist materials, Electron beam lithography, Extreme ultraviolet lithography, Photoresist developing, Lithography, Electron beams, Polymers, Scanning electron microscopy, Line edge roughness, Polymethylmethacrylate

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