Dr. Siming Chen Profile

Dr. Siming Chen

at Univ College London

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Author

Publications (8)

Proceedings Article | 6 October 2021 Presentation

Inversion boundary annihilation in GaAs grown on On‐Axis Silicon (001) via Molecular Beam Epitaxy

Xuezhe Yu, Keshuang Li, Junjie Yang, Ying Lu, Zizhuo Liu, Mingchu Tang, Pamela Jurczak, Jae-Seong Park, Huiwen Deng, Hui Jia, Manyu Dang, Ana Sanchez, Richard Beanland, Wei Li, Xiaodong Han, Jinchuan Zhang, Huan Wang, Fengqi Liu, Siming Chen, Alwyn Seeds, Peter Smowton, Huiyun Liu

Proceedings Volume 11880, 118800H (2021) https://doi.org/10.1117/12.2601451

KEYWORDS: Silicon, Gallium arsenide, Molecular beam epitaxy, Photonic integrated circuits, Interfaces, Indium arsenide, Epitaxy, CMOS technology, Annealing

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Proceedings Article | 18 April 2021 Presentation + Paper

Monolithic and hybrid integration of InAs/GaAs quantum dot microdisk lasers on silicon

N. Kryzhanovskaya, E. Moiseev, A. Nadtochiy, M. Maximov, A. Dragunova, M. Fetisova, M. Kulagina, Yu. Guseva, S. Mintairov, N. Kalyuzhnyy, M. Tang, M. Liao, J. Wu, S. Chen, H. Liu, A. Zhukov

Proceedings Volume 11775, 117750P (2021) https://doi.org/10.1117/12.2589118

KEYWORDS: Silicon, Semiconductor lasers, Quantum dots, Hybrid silicon lasers, Resistance, Gallium arsenide, Thin films, Silicon films, Semiconducting wafers, Optoelectronics

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Proceedings Article | 19 November 2019 Paper

Optically-pumped InAs/GaAs quantum-dot microdisk lasers monolithically grown on on-axis Si (001) substrate

Taojie Zhou, Mingchu Tang, Guohong Xiang, Siming Chen, Huiyun Liu, Zhaoyu Zhang

Proceedings Volume 11182, 1118208 (2019) https://doi.org/10.1117/12.2538773

KEYWORDS: Silicon, Quantum optics, Quantum dots, Laser damage threshold, Continuous wave operation, Optical pumping, Laser sources

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Proceedings Article | 23 May 2018 Presentation

Continuous wavelength operation of injection III-V microdisk lasers directly grown on Si substrate with emission wavelength beyond 1.2 µm (Conference Presentation)

Natalia Kryzhanovskaya, Eduard Moiseev, Yuliya Polubavkina, Mikhail Maximov, Andrey Lipovskii, Mingchu Tang, Mengya Liao, Jiang Wu, Siming Chen, Alexandr Dubinov, Nikolay Baidus, Dmitriy Yurasov, Yulia Guseva, Zakhary Krasilnik, Huiyun Liu, Alexey Zhukov

Proceedings Volume 10682, 106820V (2018) https://doi.org/10.1117/12.2306225

KEYWORDS: Silicon, Quantum wells, Semiconductor lasers, Quantum dots, Laser damage threshold, Photonic integrated circuits, Resonators, Optical lithography, Plasma etching, Plasma

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A combination of high operation temperatures and small sizes of diode lasers directly grown on silicon substrates is essential for their application in future photonic integrated circuits. In this work, we report on electrically-pumped III-V microdisk lasers monolithically grown on Si substrates with active regions of two kinds: either an InGaAs/GaAs quantum well (QW) or InAs/InGaAs/GaAs quantum dots (QDs). Microdisk resonators were defined using photolithography and plasma chemical etching. The active region diameter was varied from 11 to 31 µm. Microlasers were tested without external cooling at room and elevated temperatures. The QW laser structure was epitaxially grown by MOCVD on silicon (100) with an intermediate MBE-grown Ge buffer. Under pulsed injection (0.5-µs-long injection pulses with 150 Hz repetition rate), lasing is achieved in QW microlasers with diameters of 23-31 µm with a minimal threshold current density of 28 kA/cm^2. Quasi-single mode lasing (SMSR is up to 20 dB) is observed with emission wavelength around 988 nm. To the best of our knowledge, this is the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. Quantum wells are typically characterized by high optical gain and high direct modulation bandwidth, which can be important in view of further miniaturization of microlasers and their future application. The sidewall passivation can be helpful to reduce the threshold current. As compared to QWs, quantum dots demonstrate reduced sensitivity to threading dislocations and other crystalline defects as well as to sidewall recombination owing to a suppressed lateral transport of charge carriers which prevents their diffusion towards non-radiate recombination centers. The QD laser structure was directly grown by MBE on Si (001) substrate with 4° offcut to the [011] plane. QD microlasers were tested at room temperature in CW regime with a DC current varied from 0 to 50 mA and at elevated temperatures under CW and pulsed excitation (0.5-µs-long injection pulses with 10 kHz repetition rate). The InAs/InGaAs QDs active region provides the wavelengths in the 1.32–1.35 µm spectral interval. At room temperature, lasing is achieved in microlasers with diameters of 14-30 µm with a minimal threshold current density of 600 A/cm2 (compare with that of 427 A/cm2 in edge-emitting laser). The threshold current density and specific thermal resistance of 0.004 °C×cm^2/mW are comparable to those of high-quality QD microdisk lasers on GaAs substrates. Lasing wavelength demonstrates low sensitivity to current-induced self-heating. Lasing is single mode (SMSR 20 dB) with a dominant mode linewidth as narrow as 30 pm. Under CW excitation lasing sustains up to 60 °C in microlasers with diameter of 30 µm. Because of self-heating, an actual temperature of the active region is close to 100°C. Under pulsed excitation, the maximal lasing temperature is 110°C. To our best knowledge, these are the smallest microlasers on silicon operating at such elevated temperatures ever reported. Up to 90°C lasing proceeds on the ground state optical transition of QDs with wavelength about 1.35 µm. At higher temperatures, lasing wavelength jumps to the excited state transition.

Proceedings Article | 20 February 2017 Presentation + Paper

Integrating III-V quantum dot lasers on silicon substrates for silicon photonics

M. Liao, S. Chen, M. Tang, J. Wu, W. Li, K. Kennedy, I. Ross, A. Seeds, H. Liu

Proceedings Volume 10108, 101081A (2017) https://doi.org/10.1117/12.2249761

KEYWORDS: Silicon, Semiconductor lasers, Silicon photonics, Quantum dots, Molecular beam epitaxy, Continuous wave operation, Quantum dot lasers, Semiconductor materials, Electronics, Light, Gallium arsenide, Indium, Laser damage threshold, Photonics, Gallium, Optical filters

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Proceedings Article | 15 March 2016 Paper

InAs/GaAs quantum-dot light emitters monolithically grown on Si substrate

M. Liao, S. Chen, M. Tang, J. Wu, Q. Jiang, A. Seeds, H. Liu

Proceedings Volume 9758, 975803 (2016) https://doi.org/10.1117/12.2213089

KEYWORDS: Silicon, Semiconductor lasers, Pulsed laser operation, Silicon photonics, Metamaterials, Plasmonics, Light emitting diodes, Molecular beam epitaxy, Hybrid silicon lasers, Copper, Gallium arsenide, Transmission electron microscopy, Atomic force microscopy, Laser damage threshold, Fabrication, Indium arsenide, Quantum dots

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Proceedings Article | 14 March 2016 Paper

1.7eV Al0.2Ga0.8As solar cells epitaxially grown on silicon by SSMBE using a superlattice and dislocation filters

Arthur Onno, Jiang Wu, Qi Jiang, Siming Chen, Mingchu Tang, Yurii Maidaniuk, Mourad Benamara, Yuriy Mazur, Gregory Salamo, Nils-Peter Harder, Lars Oberbeck, Huiyin Liu

Proceedings Volume 9743, 974310 (2016) https://doi.org/10.1117/12.2208950

KEYWORDS: Silicon, Solar cells, Gallium arsenide, Superlattices, Photovoltaics, Molecular beam epitaxy, Group III-V semiconductors, Transmission electron microscopy, Laser sintering, External quantum efficiency, Calibration

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Proceedings Article | 27 February 2015 Paper

Optimising the defect filter layer design for III/V QDs on Si for integrated laser applications

Jonathan Orchard, Jiang Wu, Siming Chen, Qi Jiang, Thomas Ward, Richard Beanland, Huiyun Lui, David Mowbray

Proceedings Volume 9373, 93730G (2015) https://doi.org/10.1117/12.2076601

KEYWORDS: Silicon, Gallium arsenide, Annealing, Semiconductor lasers, Optical filters, Transmission electron microscopy, Luminescence, Laser applications, Superlattices, Excitons

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Showing 5 of 8 publications

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