Dr. Jacqueline E. Diaz Profile

Dr. Jacqueline E. Diaz

Senior Litho Engineer

SPIE Involvement:

Author

Publications (12)

Proceedings Article | 15 December 2000 Paper

Quantum well infrared photodetector (lambda=3-20 um) focal plane arrays: monolithic integration with Si-based readout-integrated circuitry for low cost and high performance

Manijeh Razeghi, Matthew Erdtmann, Christopher Jelen, Jacqueline Diaz, F. Guastavinos, Gail Brown, Yoon-Soo Park

Proceedings Volume 4130, (2000) https://doi.org/10.1117/12.409875

KEYWORDS: Quantum well infrared photodetectors, Sensors, Silicon, Quantum wells, Lithium, Epitaxy, Absorption, Staring arrays, Infrared sensors, Superlattices

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Proceedings Article | 13 April 2000 Paper

Solar-blind AlxGa1-xN p-i-n photodetectors grown on LEO and non-LEO GaN

Peter Sandvik, Danielle Walker, Patrick Kung, Kan Mi, Fatemeh Shahedipour, Vipan Kumar, Xinghong Zhang, Jacqueline Diaz, Christopher Jelen, Manijeh Razeghi

Proceedings Volume 3948, (2000) https://doi.org/10.1117/12.382126

KEYWORDS: Gallium nitride, Sensors, Ultraviolet radiation, PIN photodiodes, Photodetectors, Annealing, Aluminum, Internal quantum efficiency, Metals, Silicon

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Proceedings Article | 8 April 1999 Paper

High-quality LEO growth and characterization of GaN films on Al2O3 and Si substrates

Manijeh Razeghi, Patrick Kung, Danielle Walker, Melissa Hamilton, Jacqueline Diaz

Proceedings Volume 3725, (1999) https://doi.org/10.1117/12.344718

KEYWORDS: Gallium nitride, Silicon, X-ray diffraction, Scanning electron microscopy, Sapphire, Crystals, Atomic force microscopy, Metalorganic chemical vapor deposition, Photomicroscopy, X-rays

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Proceedings Article | 7 April 1999 Paper

Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth

Patrick Kung, Danielle Walker, Peter Sandvik, Melissa Hamilton, Jacqueline Diaz, Il Hwan Lee, Manijeh Razeghi

Proceedings Volume 3629, (1999) https://doi.org/10.1117/12.344586

KEYWORDS: Gallium nitride, Photodetectors, Sensors, Sapphire, Ultraviolet radiation, Helium cadmium lasers, Electrodes, Metalorganic chemical vapor deposition, Scanning electron microscopy, Dielectrics

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Proceedings Article | 7 April 1999 Paper

AlxGa1-xN p-i-n photodiodes on sapphire substrates

Danielle Walker, Patrick Kung, Peter Sandvik, Jia-Jiun Wu, Melissa Hamilton, Il Hwan Lee, Jacqueline Diaz, Manijeh Razeghi

Proceedings Volume 3629, (1999) https://doi.org/10.1117/12.344556

KEYWORDS: Aluminum, Photodetectors, Capacitance, Sensors, PIN photodiodes, Sapphire, Ultraviolet radiation, Visible radiation, Magnesium, Doping

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Proceedings Article | 19 August 1998 Paper

Investigation of 980-nm GaInAs/GaAs/GaInP QW high-power lasers

Lijun Wang, Sheng Li Wu, Yun Liu, Yongqiang Ning, Jacqueline Diaz, Ivan Eliashevich, Hyuk Yi, Manijeh Razeghi

Proceedings Volume 3547, (1998) https://doi.org/10.1117/12.319596

KEYWORDS: Quantum wells, High power lasers, Continuous wave operation, Gallium arsenide, Heterojunctions, Mirrors, Coating, Semiconductor lasers, Laser damage threshold, Cladding

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Proceedings Article | 7 April 1998 Paper

Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition

Manijeh Razeghi, Adam Saxler, Patrick Kung, Danielle Walker, Xiaolong Zhang, Adam Rybaltowski, Y. Xiao, Hyuk Yi, Jacqueline Diaz

Proceedings Volume 3284, (1998) https://doi.org/10.1117/12.304463

KEYWORDS: Semiconductor lasers, Continuous wave operation, Quantum wells, Gallium nitride, Polarization, Anisotropy, Laser damage threshold, Diodes, Mirrors, Laser scattering

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Proceedings Article | 2 May 1997 Paper

Temperature insensitivity of the Al-free InGaAsP lasers for =808 and 980 nm

Manijeh Razeghi, Hyuk Yi, Jacqueline Diaz, Seongsin Kim, Matthew Erdtmann

Proceedings Volume 3001, (1997) https://doi.org/10.1117/12.273792

KEYWORDS: Semiconductor lasers, Scattering, Laser scattering, Absorption, Continuous wave operation, Cladding, Waveguides, Reliability, Quantum wells, Gallium arsenide

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Proceedings Article | 23 January 1997 Paper

High-power InAsSb/InAsSbP laser diodes emitting at 3- to 5-um range

Manijeh Razeghi, Jacqueline Diaz, Hyuk Yi, D. Wu, B. Lane, Adam Rybaltowski, Y. Xiao, Harry Jeon

Proceedings Volume 2997, (1997) https://doi.org/10.1117/12.264148

KEYWORDS: Semiconductor lasers, High power lasers, Heterojunctions, Quantum wells, Indium arsenide, Pulsed laser operation, Continuous wave operation, Mid-IR, Mirrors, Electroluminescence

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Proceedings Article | 24 September 1996 Paper

Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser

Lijun Wang, Sheng Li Wu, Jacqueline Diaz, Ivan Eliashevich, Hyuk Yi, Manijeh Razeghi

Proceedings Volume 2886, (1996) https://doi.org/10.1117/12.251910

KEYWORDS: Quantum efficiency, Quantum wells, High power lasers, External quantum efficiency, Laser damage threshold, Internal quantum efficiency, Continuous wave operation, Temperature metrology, Lithium, Heterojunctions

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Proceedings Article | 24 April 1995 Paper

Investigation of 0.8-um InGaAsP-GaAs laser diodes with multiple quantum wells

Jacqueline Diaz, Hyuk Yi, Seongsin Kim, Matthew Erdtmann, Lewis Wang, Ivan Eliashevich, Erwan Bigan, Manijeh Razeghi

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206931

KEYWORDS: Quantum wells, Semiconductor lasers, High power lasers, Waveguides, Cladding, Nd:YAG lasers, Continuous wave operation, Heterojunctions, Solid state lasers, Gallium arsenide

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Proceedings Article | 2 June 1994 Paper

GaInAsP/GaAs for high-power pumping laser

Manijeh Razeghi, X. He, Jacqueline Diaz, James Hoff, Matthew Erdtmann, Emil Kolev

Proceedings Volume 2145, (1994) https://doi.org/10.1117/12.177153

KEYWORDS: Luminescence, Gallium arsenide, Metalorganic chemical vapor deposition, Temperature metrology, High power lasers, Indium gallium phosphide, Optical pumping, Semiconductors, Oxygen, X-ray diffraction

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Showing 5 of 12 publications

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