This paper discusses the scatterometry-based metrology measurement of 28nm high k metal gate after-develop
inspection (ADI) and after-etch inspection (AEI) layer structures. For these structures, the critical measurement
parameters include side wall angle (SWA) and critical dimension (CD). For production process control of these
structures, a metrology tool must utilize a non-destructive measurement technique, and have high sensitivity, precision
and throughput. Spectroscopic critical dimension (SCD) metrology tools have been implemented in production for
process control of traditional poly gate structures. For today's complex metal gate devices, extended SCD technologies
are required. KLA-Tencor's new SpectraShape 8810 uses multi-azimuth angles and multi-channel optics to produce the
high sensitivity and precision required for measurement of critical parameters on metal gate structures. Data from
process of record (POR), focus-exposure matrix (FEM) and design of experiment (DOE) wafers are presented showing
the performance of this new SCD tool on metal gate ADI and AEI process structures. Metal gate AEI scatterometry
measurement results are also compared to transmission electron microscopy (TEM) reference measurements. These data
suggest that the SpectraShape 8810 has the required sensitivity and precision to serve as a production process monitor
for 28nm and beyond complex metal gate structures.
In this paper we describe, from the user's point of view, how Inverse Lithography Technology (ILT) differs from Optical Proximity Correction (OPC). We show simulation and experimental results from 90nm and 65nm semiconductor nodes, comparing ILT-generated masks and OPC-generated masks for real-life layouts, in a production environment. In addition, we discuss issues related to complexity and manufacturability of ILT-generated masks.
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