Dr. Jean-Hervé Tortai Profile

Dr. Jean-Hervé Tortai

at LTM CNRS

SPIE Involvement:

Author

Publications (13)

Proceedings Article | 27 April 2023 Presentation + Paper

Sensitivity analysis of optical scatterometry technique for high aspect ratio trench measurement

J. Grasland, D. Le Cunff, H. Pham, M. Besacier, J. Tortai

Proceedings Volume 12496, 124960C (2023) https://doi.org/10.1117/12.2657876

KEYWORDS: Mueller matrices, Scatterometry, Matrices, Computer simulations, Metrology, Critical dimension metrology

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Proceedings Article | 22 February 2021 Poster + Presentation + Paper

Detection and correlation of yield loss induced by color resist deposition deviation with a deep learning approach applied to optical acquisitions

Thomas Alcaire, Delphine Le Cunff, Jean-Hervé Tortai, Sebastien Soulan, Victor Gredy, Maxime Templier, Mehdi Kessar, Raffaele Bianchini, Audrey Berthoud

Proceedings Volume 11611, 116112G (2021) https://doi.org/10.1117/12.2582058

KEYWORDS: RGB color model, Semiconducting wafers, Statistical modeling, Metrology, Interferometry, Wafer-level optics, Reflectometry, Process control, Optical filters, Model-based design

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Proceedings Article | 26 March 2019 Presentation + Paper

FEM simulation for artificial generation of SEM pictures

Duy Duc Nguyen, Jean-Herve Tortai, Patrick Schiavone

Proceedings Volume 10959, 1095918 (2019) https://doi.org/10.1117/12.2515181

KEYWORDS: Scanning electron microscopy, Finite element methods, Diffusion, Silicon, Signal processing, Image processing, Electron beams

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Proceedings Article | 19 September 2018 Paper

FEM simulation of charging effect during SEM metrology

Duy Duc Nguyen, Jean-Herve Tortai, Mohamed Abaidi, Patrick Schiavone

Proceedings Volume 10775, 107750P (2018) https://doi.org/10.1117/12.2326609

KEYWORDS: Scanning electron microscopy, Metrology, Monte Carlo methods, Silicon, Finite element methods, Diffusion, Electron beam lithography, 3D modeling

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Proceedings Article | 26 September 2016 Paper

Improvement of Electron Beam Lithography modeling for overdose exposures by using Dill transformation

Mohamed Abaidi, Mohamed Saib, Jean-Hervé Tortai, Patrick Schiavone

Proceedings Volume 9985, 998507 (2016) https://doi.org/10.1117/12.2240928

KEYWORDS: Electron beam lithography, Lithography, Calibration, Data modeling, Point spread functions, Statistical modeling, Switches, Electroluminescence, Optimization (mathematics), Chemical analysis

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Proceedings Article | 1 October 2013 Paper

Extreme long range process effects characterization and compensation

Thiago Figueiro, Clyde Browning, Martin Thornton, Cyril Vannuffel, Kang-Hoon Choi, Christoph Hohle, Jean-Herve Tortai, Patrick Schiavone

Proceedings Volume 8886, 88860F (2013) https://doi.org/10.1117/12.2030664

KEYWORDS: Semiconducting wafers, Calibration, Point spread functions, Reticles, Electron beam lithography, Mathematical modeling, Chemical mechanical planarization, Modulation, Forward error correction, Metrology

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Proceedings Article | 23 September 2013 Paper

Metrology variability and its impact in process modeling

Thiago Figueiro, Mohamed Saib, Kang-Hoon Choi, Christoph Hohle, Martin Thornton, Cyril Vannufel, Jean-Hervé Tortai, Patrick Schiavone

Proceedings Volume 8880, 888020 (2013) https://doi.org/10.1117/12.2026423

KEYWORDS: Calibration, Metrology, Semiconducting wafers, Error analysis, Process modeling, Data modeling, Point spread functions, Opacity, Electron beam lithography, Statistical modeling

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Proceedings Article | 8 November 2012 Paper

Advanced module for model parameter extraction using global optimization and sensitivity analysis for electron beam proximity effect correction

Thiago Figueiro, Kang-Hoon Choi, Manuela Gutsch, Martin Freitag, Christoph Hohle, Jean-Hervé Tortai, Mohamed Saib, Patrick Schiavone

Proceedings Volume 8522, 852212 (2012) https://doi.org/10.1117/12.965312

KEYWORDS: Calibration, Point spread functions, Data modeling, Optimization (mathematics), Semiconducting wafers, Electron beams, Beam analyzers, Metrology, Photoresist processing, Electron beam lithography

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Proceedings Article | 24 March 2009 Paper

An inverse ellipsometric problem for thin film characterization: comparison of different optimization methods

Ayşe Akbalık, Sébastien Soulan, Jean-Hervé Tortai, David Fuard, Issiaka Kone, Jérôme Hazart, Patrick Schiavone

Proceedings Volume 7272, 72723S (2009) https://doi.org/10.1117/12.814118

KEYWORDS: Thin films, Refractive index, Metrology, Inspection, Process control, Optical lithography, Current controlled current source, Spectroscopy, Polymer thin films, Polymers

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Proceedings Article | 4 April 2008 Paper

Ellipsometry studies of the kinetic of deprotection of thin 193 nm positive tone resist film

H. Ridaoui, S. Derrough, C. Sourd, H. Trouve, A. Pikon, J. H. Tortai

Proceedings Volume 6923, 692326 (2008) https://doi.org/10.1117/12.773916

KEYWORDS: Ultraviolet radiation, Thin films, Lithography, Ellipsometry, Temperature metrology, Lamps, Time metrology, Optical properties, Xenon, Polymers

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Proceedings Article | 29 March 2006 Paper

Overcoming pattern collapse on e-beam and EUV lithography

A. Jouve, J. Simon, A. Pikon, H. Solak, C. Vannuffel, J.-H. Tortai

Proceedings Volume 6153, 61531C (2006) https://doi.org/10.1117/12.656400

KEYWORDS: Electron beam lithography, Capillaries, Liquids, Adhesives, Extreme ultraviolet lithography, Interfaces, Lithography, Polymers, Chemically amplified resists, Extreme ultraviolet

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Proceedings Article | 16 June 2005 Paper

Gaussian beam writing strategy: accuracy of using the shape beam simulator SELID for Gaussian beam systems

J. Tortai, J. Thiault, R. Tiron, L. Mollard, Stephan Haefele, Sergey Vychub, John Lewellen, Peter Brooker

Proceedings Volume 5835, (2005) https://doi.org/10.1117/12.637286

KEYWORDS: Beam shaping, Gaussian beams, Optical simulations, Electron beam lithography, Monte Carlo methods, Diffusion, Polymethylmethacrylate, Photomasks, Electrons, Molecules

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Proceedings Article | 4 May 2005 Paper

Overcoming pattern collapse of ultra high resolution dense lines obtained with EUV resists

A. Jouve, J. Simon, J. Foucher, T. David, J.-H. Tortai, Harun Solak

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.598763

KEYWORDS: Electron beam lithography, Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Line width roughness, Photoresist processing, Liquids, Thin films, Line edge roughness, Etching

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Future lithography tools will have to address the 32 nm node. EUV lithography at 13.4 nm wavelength is the technology that may achieve such resolution if chemically amplified EUV resists show high enough resolution capabilities. However for sub 100 nm line width patterns, the pattern collapse, generated during the drying step of the developing process, becomes a serious limiting phenomenon. We performed ultra high resolution exposures of EUV positive chemically amplified resists using either electron beam lithography (EBL), or EUV interferometry Lithography (IL) produced in a synchrotron. Two theoretical models have been compared with experimental results. One is mainly dealing with adhesion failure and the other with the line deformation. Adhesion failure occurs when capillarity pressure on the pattern become stronger than the attractive Van der Walls forces assuring the pattern adhesion on the substrate. Mechanical failure occurs once the lines deflection exceeds the mechanical breaking resistance of the resist. We highlighted that pattern collapse mode depends on resist thickness. Collapsing of patterns with thickness>100 nm are properly fitted with the deformation model of the resist; whereas for pattern height under 60 nm, experimental results obtained by EUVIL and EBL are properly predicted with the adhesion failure model. To push resolution further and avoid pattern collapse, we targeted to expose sub 100 nm thick resist films. AFM3D measurements on EBL patterns show that reducing the resist thickness increases their top Line Width Roughness (LWR) testifying of physical resist properties variations in the resist interfacial layers. However we pointed out an optimum resist thickness, hence an optimal dilution. By tuning developer normality and puddle time, straight resist profiles were obtained. Finally we reached dense 40/40 nm lines in XP9947W150 resist using both exposure tools and validate the process compatibility with future etching steps by transferring 40/40 nm dense lines patterned with EBL into a metallic hard mask.

Showing 5 of 13 publications

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