Mr. Clyde H. Browning Profile

Clyde H. Browning

Mask Design Manager at ASELTA Nanographics

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Publications (12)

Proceedings Article | 29 August 2019 Paper

Influence of the dose assignment and fracturing type on patterns exposed by a variable shaped e-beam writer: simulation vs experiment

Varvara Brackmann, Michael Friedrich, Clyde Browning, Norbert Hanisch, Benjamin Uhlig

Proceedings Volume 11177, 1117713 (2019) https://doi.org/10.1117/12.2534642

KEYWORDS: Point spread functions, Scattering, Scanning electron microscopy, Tolerancing, Critical dimension metrology, Calibration, Electron beam lithography, Electron beams

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Proceedings Article | 19 September 2018 Paper

Curvilinear data processing methods and verification

Clyde Browning, Serguei Postnikov, Matthieu Milléquant, Sébastien Bayle, Patrick Schiavone

Proceedings Volume 10775, 107750K (2018) https://doi.org/10.1117/12.2326599

KEYWORDS: Tolerancing, Data processing, Lithography, Manufacturing, Photomasks, Data modeling, Optical proximity correction, Photoresist processing, Silicon

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Designs for photonic devices on silicon relies on non-Manhattan features such as curves and a wide variety of angles. Reticle Enhancement Techniques (RET) that are commonly used for CMOS manufacturing now are applied to curvilinear data patterns for the same reasons of enhancing pattern fidelity. Common techniques for curvilinear data processing include Manhattanization, jog removal, and jog alignment. We propose a novel method of describing curvilinear shapes in terms of curves reconstructed between control points. Such representation of curvilinear shapes brings many benefits in terms of pattern description (improved fidelity, file compaction), correction and verification. For example, it allows smooth displacements during the design correction procedure for process effects. The conventional correction by biasing each fragment illustrates the curve-based biasing where only the control points have been moved and the corrected shape was then reconstructed by connecting the control points in their new positions by the new curves. This method results in faster computation because there are fewer locations to adjust geometry, easier convergence and intrinsic continuity between edges. It also affords significant reduction of the design file size. Besides processing curvilinear pattern data, verification is also required after any original pattern modifications. Mask Rule Checks (MRC) are considered as standard step in any design data preparation flows, but the conventional MRC algorithms are conceived for Manhattan designs and as such they often result in numerous false errors or even missing errors when applied to photonics or ILT (Inverse Lithography Technology) designs. In addition, MRC for photonic layouts require much more than basic width and space checking. We developed a verification technology compliant with curvilinear layouts. The new MRC technique is also based on curve representation of the original design comparing directly the curves instead of the straight fragments. It permits to have only one error flag per curve instead of multiple errors seen in fragment-by-fragment MRC.

Proceedings Article | 22 March 2016 Paper

Complete data preparation flow for Massively Parallel E-Beam lithography on 28nm node full-field design

Aurélien Fay, Clyde Browning, Pieter Brandt, Jacky Chartoire, Sébastien Bérard-Bergery, Jérôme Hazart, Alexandre Chagoya, Sergei Postnikov, Mohamed Saib, Ludovic Lattard, Patrick Schavione

Proceedings Volume 9777, 977714 (2016) https://doi.org/10.1117/12.2219178

KEYWORDS: Electron beam lithography, Lithography, Optical lithography, Photoresist processing, Software development, Semiconducting wafers, Optical simulations, Electronic design automation, Data modeling, Metrology, Point spread functions, Electroluminescence, Logic, Critical dimension metrology, Calibration, Manufacturing

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Massively parallel mask-less electron beam lithography (MP-EBL) offers a large intrinsic flexibility at a low cost of ownership in comparison to conventional optical lithography tools. This attractive direct-write technique needs a dedicated data preparation flow to correct both electronic and resist processes. Moreover, Data Prep has to be completed in a short enough time to preserve the flexibility advantage of MP-EBL. While the MP-EBL tools have currently entered an advanced stage of development, this paper will focus on the data preparation side of the work for specifically the MAPPER Lithography FLX-1200 tool [1]-[4], using the ASELTA Nanographics Inscale software. The complete flow as well as the methodology used to achieve a full-field layout data preparation, within an acceptable cycle time, will be presented. Layout used for Data Prep evaluation was one of a 28 nm technology node Metal1 chip with a field size of 26x33mm², compatible with typical stepper/scanner field sizes and wafer stepping plans. Proximity Effect Correction (PEC) was applied to the entire field, which was then exported as a single file to MAPPER Lithography’s machine format, containing fractured shapes and dose assignments. The Soft Edge beam to beam stitching method was employed in the specific overlap regions defined by the machine format as well. In addition to PEC, verification of the correction was included as part of the overall data preparation cycle time. This verification step was executed on the machine file format to ensure pattern fidelity and accuracy as late in the flow as possible. Verification over the full chip, involving billions of evaluation points, is performed both at nominal conditions and at Process Window corners in order to ensure proper exposure and process latitude. The complete MP-EBL data preparation flow was demonstrated for a 28 nm node Metal1 layout in 37 hours. The final verification step shows that the Edge Placement Error (EPE) is kept below 2.25 nm over an exposure dose variation of 8%.

Proceedings Article | 23 October 2015 Paper

Sensitivity analysis for high accuracy proximity effect correction

Xaver Thrun, Clyde Browning, Kang-Hoon Choi, Thiago Figueiro, Christoph Hohle, Mohamed Saib, Patrick Schiavone, Johann Bartha

Proceedings Volume 9635, 963515 (2015) https://doi.org/10.1117/12.2197175

KEYWORDS: Point spread functions, Critical dimension metrology, Algorithm development, Scattering, Calibration, Cadmium sulfide, Computer simulations, Semiconducting wafers, Photovoltaics, Electron beams

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Proceedings Article | 29 October 2014 Paper

Photonic curvilinear data processing

Clyde Browning, Thomas Quaglio, Thiago Figueiro, Sébastien Pauliac, Jérôme Belledent, Aurélien Fay, Jessy Bustos, Jean-Christophe Marusic, Patrick Schiavone

Proceedings Volume 9235, 92350V (2014) https://doi.org/10.1117/12.2069335

KEYWORDS: Tolerancing, Lithography, Manufacturing, Vestigial sideband modulation, Photomasks, Data processing, Photoresist processing, Electron beam lithography, Printing, Photonic crystals

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Proceedings Article | 8 October 2014 Paper

Effective corner rounding correction in the data preparation for electron beam lithography

Kang-Hoon Choi, Clyde Browning, Thiago Figueiro, Christoph Hohle, Michael Kaiser, Patrick Schiavone

Proceedings Volume 9235, 92350U (2014) https://doi.org/10.1117/12.2066156

KEYWORDS: Chromium, Electron beam lithography, Data corrections, Cadmium, Beam shaping, Neodymium, Lithography, Photoresist processing, Photomasks, Critical dimension metrology

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Proceedings Article | 1 October 2013 Paper

Extreme long range process effects characterization and compensation

Thiago Figueiro, Clyde Browning, Martin Thornton, Cyril Vannuffel, Kang-Hoon Choi, Christoph Hohle, Jean-Herve Tortai, Patrick Schiavone

Proceedings Volume 8886, 88860F (2013) https://doi.org/10.1117/12.2030664

KEYWORDS: Semiconducting wafers, Calibration, Point spread functions, Reticles, Electron beam lithography, Mathematical modeling, Chemical mechanical planarization, Modulation, Forward error correction, Metrology

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Proceedings Article | 9 September 2013 Paper

Shot count reduction for non-Manhattan geometries: concurrent optimization of data fracture and mask writer design

Russell Cinque, Tadashi Komagata, Taiichi Kiuchi, Clyde Browning, Patrick Schiavone, Paolo Petroni, Luc Martin, Thomas Quaglio

Proceedings Volume 8880, 88801F (2013) https://doi.org/10.1117/12.2028944

KEYWORDS: Vestigial sideband modulation, Tolerancing, Photomasks, Line edge roughness, Algorithm development, Point spread functions, Printing, Scanning electron microscopy, Critical dimension metrology, Detection and tracking algorithms

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Proceedings Article | 26 March 2013 Paper

Reticle level compensation for long range effects

Thiago Figueiro, Clyde Browning, Martin Thornton, Cyril Vannufel, Patrick Schiavone

Proceedings Volume 8680, 868028 (2013) https://doi.org/10.1117/12.2011835

KEYWORDS: Reticles, Point spread functions, Chemical mechanical planarization, Mathematical modeling, Scattering, Critical dimension metrology, Calibration, Semiconducting wafers, Electron beam lithography, Laser scattering

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Proximity Effects in electron beam lithography impact feature dimensions, pattern fidelity and uniformity. Electron scattering effects are commonly addressed using a mathematical model representing the radial exposure intensity distribution induced by a point electron source, commonly named Point Spread Function (PSF). PSF models are usually employed for correcting “short-range” and “long-range” backscattering effects up to 10μm to 15μm. It is well known that there are also some process related phenomena impacting pattern uniformity that have a wider range (fogging, chemical mechanical polishing -CMP- effects, etc.) which impacts up to a few millimeters or more. There are a number of commercial strategies for mitigating such long range effects based on data density. However, those traditional ones are usually performed within a single chip on a reticle field and ignore the presence of adjacent fields, neglecting their influence. Full field reticles can contain several different designs or arrayed chips in a multitude of layout placements. Reticle level jobdeck placing each design at specific sites, independent of each other can be used to account for the density of each pattern that has a relative impact on its neighbors, even if they are several millimeters away from offending data. Therefore, full field density analysis accounting for scribe frames and all neighboring patterns is required for reaching fidelity control requirements such as critical dimension (CD) and line end shortening (LES) on the full plate. This paper describes a technique to compensate long range effects going across chip boundaries to the full reticle exposure field. The extreme long range effects are also represented with a model that is calibrated according to the characteristics of the user‟s process. Data correction can be based on dose and geometry modulation. Uniform pattern dimensional control matching the user's specific process long range variability can be achieved with the techniques described in this paper.

Proceedings Article | 30 June 2012 Paper

A novel mask proximity correction software combining accuracy and reduced writing time for the manufacturing of advanced photomasks

Patrick Schiavone, Luc Martin, Clyde Browning, Vincent Farys, Frank Sundermann, Shogo Narukawa, Tadahiko Takikawa, Naoya Hayashi

Proceedings Volume 8441, 84411F (2012) https://doi.org/10.1117/12.981609

KEYWORDS: Photomasks, Calibration, Modulation, Manufacturing, Data modeling, Ions, Extreme ultraviolet, Lithography, Scattering, Electroluminescence

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Proceedings Article | 12 May 2005 Paper

Alignment robustness for 90 nm and 65 nm node through copper alignment mark integration optimization

Scott Warrick, Paul Hinnen, Rob Morton, Kevin Cooper, Pierre-Olivier Sassoulas, Jerome Depre, Ramon Navarro, Richard van Haren, Clyde Browning, Doug Reber, Henry Megens

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599807

KEYWORDS: Optical alignment, Semiconducting wafers, Chemical mechanical planarization, Copper, Scanning probe microscopy, Front end of line, Back end of line, Overlay metrology, Metals, Silicon

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Proceedings Article | 11 March 2002 Paper

GDSII considered harmful

Alfred Reich, Robert Boone, Warren Grobman, Clyde Browning

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458289

KEYWORDS: Resolution enhancement technologies, Photomasks, Optical proximity correction, Data modeling, Electronic design automation, Data conversion, Semiconducting wafers, Model-based design, Data processing, Binary data

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Showing 5 of 12 publications

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