The combination of photonic integrated circuits with MEMS allows to change the effective refractive index with unique ultra-low power dissipation characteristics. This enables high integration density applications like photonic quantum computing under cryogenic conditions. The here introduced fabrication technology can universally be applied to all common material platforms, such as silicon, silicon nitride or lithium niobate. The technological flexibility allows to use the IPMS PIC-technology (silicon nitride based) or cooperate very well cross-platforms with partners. The fabrication concept is successfully demonstrated and enables low-voltage devices with very low power consumption and modulation speeds up to megahertz.
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