This paper reports the results of an investigation of the electrical and photoelectrical properties of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction formed by the deposition of thin films PEDOT:PSS on CdZnTe substrates. The Cd1–xZnxTe solid solution with low Zn content was grown by the Bridgman method at low cadmium vapor pressure and had a low resistivity ρ ≈ 102 Ohm•cm. The values of the series resistance Rs and shunt resistance Rsh of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction were determined from the dependence of their differential resistance Rdif. The temperature dependencies of the height of the potential barrier of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction was determined from the I-V characteristics. The dominating current transport mechanisms through the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunctions were determined.
Schottky graphite / p-InP diodes were first fabricated by transferring the drawn graphite film to an InP substrate with a hole-type conductivity. As a result of research, the main mechanisms of current transfer through Schottky diodes graphite / p-InP were determined: these are multistage tunneling-recombination processes involving surface states at the graphite / p-InP interface and tunneling, which is described by Newman's formula at direct displacement; tunneling with reverse displacement. The studied heterojunctions have pronounced diode characteristics with a rectification coefficient k ≈ 102 (at V = 1 V). It is shown that the created graphite / p-InP Schottky diodes have a potential barrier height of 0.71 eV
TiN thin films were deposited are deposited by DC reactive magnetron sputtering. The effect of annealing on the electrical and optical properties of the thin films was investigated. Temperature dependences of the resistance R of the TiN films were measured within the temperature range T ÷ 295-420 K. There was established that all samples under investigation had n-type of conductivity. Based on the dependences (αhν)2 = f(hν), the presence of direct allowed interband optical transitions in the TiN thin films is established and the optical band gap values before and after annealing are determined. Annealing in nitrogen atmospheres led to an increase in the optical width of the band gap, which may be due to deviations from the stoichiometric composition of thin TiN films during heat treatment.
W2N thin films were prepared by DC reactive magnetron sputtering. The optical and electrical properties of the obtained thin films were investigated. The transmission spectra of thin films of tungsten nitride (deposited on glass substrates) were analyzed. The optical band gap is determined. The electrical resistance of the films is analyzed.
MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto three different n-type CdTe substrates (ρ1=0.4 Ω⋅cm, ρ2=10 Ω⋅cm, ρ3=40 Ω⋅cm) by DC reactive magnetron sputtering. The height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases.
Graphite/n-SiC Shottky diodes were prepared by means of the recently proposed technique based on the transferring of drawn graphite films onto the n-SiC single crystal substrate. Current-voltage characteristics were measured and analyzed. High quality ohmic contancts were prepared by the DC magnetron sputtering of Ni thin films onto cleaved n-type SiC single crystal substrates. The height of the potential barrier and the series resistance of the graphite/n-SiC junctions were measured and analysed. The dominant current transport mechanisms through the diodes were determined. There was shown that the dominant current transport mechanisms through the graphite/n-SiC Shottky diodes were the multi-step tunnel-recombination at forward bias and the tunnelling mechanisms at reverse bias.
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