In this study, three different shapes (traditional, spiral, and enclosed) of interdigitated electrodes are designed and implemented on BFO photodetectors (PD). The electrode material used is indium tin oxide or ITO. As the dielectric layer, BFO is sputtered onto the silicon substrate via a radio frequency magnetron sputtering machine and annealed with a furnace tube. Eight experiments are planned according to the procedures set forth by the binary design of experiments (DOE) to optimize the PD fabrication steps. The three process parameters contemplated are annealing gases (nitrogen or oxygen), annealing temperature (300 and 550ºC), and sputtering argon flow rate (5 and 10 sccm). It can be found that regardless of the shape of interdigitated electrodes used, the responsivity and detectivity obtained from Run 3 (annealing temperature of 300ºC, argon flow of 10 sccm, and nitrogen annealing gas) are relatively large. In contrast, the corresponding values are all comparatively small in Run 5 (annealing temperature of 300ºC, argon flow of 5 sccm, and oxygen annealing gas). Furthermore, the interaction between the annealing temperature and the different annealing gases, as well as the argon flow alone, have noticeable influences on the responsivity and detectivity of the BFO photodetectors with the traditional interdigitated and spiral interdigitated electrodes. As for the PDs with the enclosed electrodes, the interaction between the annealing temperature and the different annealing gases also undeniably impacts the resultant responsivity and detectivity.
We report the miniaturization of Ag/BiFeO3/ITO resistive random access memory (ReRAM) in the form of long-period waveguide grating, all fabricated entirely on z-cut lithium niobate (LiNbO3) substrate. The electric characterization vividly reveals a selector-like threshold-switching (TS) characteristic. It is well accepted that there are two filament formation mechanisms governing the operation of Ag/BiFeO3/ITO ReRAM, a two-side TS characteristic is typically generated when the positive and negative bias voltages are applied during the cycles. It is reasonable to believe the TS characteristic exists because the Joule heat produced during device operation cannot be dissipated effectively, resulting in the rupture of the conductive filament. To mitigate this shortcoming, replacing the BiFeO3 (BFO) layer of the original grating shape with a planar-layer structure is beneficial for heat dissipation, and this, in turn, would help to improve the characteristics of the ReRAM device by delivering the memory-switching characteristics as intended. As already mentioned, this ReRAM structure with the ITO bottom electrode fabricated over the lithium niobate waveguide can jointly serve as the long-period waveguide grating. Furthermore, when the Ag/BFO/ITO ReRAM structure's device area shrinks to 200 μm2, the growth path of the silver conductive filament is confined immediately above the lithium niobate waveguide. The corresponding spectral measurement shows that as the increasing number of ReRAM grating fingers are in the set state (silver conductive filaments formed), the energy of the transmission dips would decrease gradually in return, and during the reset state, the energy of the transmission dip would rise accordingly.
Steric acid is used to fabricate cladding and core layers on z-cut lithium niobate (LiNbO3) substrate by maintaining the solution melt at 280°C for 4 and 2 hours, respectively. After completing the two-step proton exchange (PE), the refractive indices of the core and cladding layers are ascertained by using the prism coupling technique, and with this information at hand, the grating period Λ of 50 μm is deduced by solving a system of transcendental waveguide equations with MATLAB. There are three methods adopted to fabricate the gratings. The first one is to utilize the proton-exchange method by directly diffusing ions into LiNbO3 to realize phase grating while keeping the solution melt at 280°C for 0.5 hours. The second one relies on using a Shipley S1813 photoresist as the corrugation grating via standard lithography. The third approach is to deposit and subsequently pattern silver metal as corrugation grating. A series of measurements would show that the maximum dip contrast of the phase grating could reach up to 31.188 dB, and the corresponding full width at half maximum (FWHM) is about 0.77 nm. In comparison, the maximum dip contrast of the photoresist corrugation grating attains up to 28.44 dB with an FWHM of approximately 1.18 nm. On the other hand, the maximum dip contrast ratio of the silver corrugation grating is determined to be around 8.15 dB with an FWHM of about 0.6 nm. The thermal dependency of the phase grating is also probed by increasing the temperature from 40 to 60°C and the corresponding dips have appeared to be blue-shifted. All of these devices have managed to demonstrate the multiple rejection bands, which is believably due to the multimode interference (MMI) phenomenon.
In this study, two different metal electrode patterns are adopted, namely, the straight and curved electrodes, each of which contains 5 different numbers of pairs of interdigitated electrodes. The foregoing design is meant to investigate the resultant photocurrent and dark current magnitudes and the associated hysteresis loops by exposing samples of different numbers of pairs of electrodes to different incident light polarizations. Both linearly and circularly polarized lights are used as incident lights for the measurement of photocurrent. Regardless of its handedness, it is found that the device with curved interdigital electrodes can generate higher photocurrent, vis-à-vis ones with straight interdigitated electrodes. In particular, the device with 8 pairs of curved interdigitated electrodes could have the current enhanced by up to 60%. Finally, among all the photodetectors tested, the highest responsivity of up to 2.15 A/W has also been achieved.
The nanowire transistors on silicon-on-insulator (SOI) substrate embedded with ferroelectric hafnium-zirconium-oxide (HfZrO2) are elaborately probed when the devices are illuminated with the ultraviolet (UV) laser. The basic functionality of the ferroelectric nanowire transistor can be verified by monitoring the drain current hysteresis during the bidirectional gate voltage scan. Therefore, this study mainly analyzes and summarizes the electrical response of the device to ultraviolet (UV) irradiation; the main emphases will be placed on the rotational direction of the hysteresis window and the width of the hysteresis window when components of different dimensions are compared with one another. To administer the comparisons impartially, the pertinent surface-to-volume ratios of these nanowire transistors are used as the gauging parameters. As the device measurements would demonstrate, Hysteresis rotating in a clockwise direction is attributed to the oxide layer defects, while the counterclockwise direction is induced by the ferroelectric effect. Needless to say, the quality of the device itself is still contingent upon the gate oxide robustness and the quality of its adjacent interfaces. And last but not least, the threshold voltage shift is also used as an indicator to illuminate the impact of changing polarization effect on the nanoscale devices. Through the effective modulation of the hysteretic window by irradiating the nanowire FETs with a UV laser, we believe many unique applications involving the optical modulation and photodetection that are commonly found in silicon photonics can be realized.
The transparent ITO/BaTiO3/ITO Resistive Random-Access Memory (ReRAM) vertically integrated with bus waveguides situated underneath is successfully realized as a ReRAM-based microdisk resonator fabricated on lithium niobate (LiNbO3) substrate. The radio-frequency sputtering technique was adopted for the subsequent depositions of the transparent ITO and BaTiO3 layers, while a proton-exchange method was utilized to fabricate the bus waveguides immersed in LiNbO3. The ReRAM-based microdisk resonator thus designed and fabricated has the novel functionality of memory and optical spectral filtering combined dually. As the ReRAM microdisk resonator is electronically switched between the two different memory states, or the high-resistance state (HRS) and low-resistance state (LRS), the output spectral observed at both the through and drop ports are noticeably shifted with one another before and after subjecting the ReRAM to a required forming process. Specifically, the spectral shift associated with the LRS state of ReRAM between the through and drop port terminal was approximately 0.4 nm, while roughly 0.6 nm was measured with the HRS state of ReRAM between the same two terminals. The resultant light wave filtering allows the spectrum of the interest to be selectively tuned as the ReRAM device dimensions are varied. Utilizing the different thin-film materials for ReRAM fabrication may also prove beneficial for spectral tuning. In light of different spectral shifts observed, the particular memory state of ReRAM could uniquely be interrogated by an optical means. Our discovery heralds a new era for realizing one of the novel optical memory devices reported to date.
In recent years many research groups have delved into the research and development of Resistive Random-Access Memory (ReRAM) which has the combined advantages of fast read/write speed, simplicity in structure, small device size and density, low activation bias voltage, low power consumption, allowably many periodic operating cycles and nonvolatile memory feature. In order to operate RRAM in an ultraviolet (UV) spectroscopic regime, the spectral transparency of electrodes and reliable device performance are keys to ensuring its continual applicability. Among the materials considered, nickel oxide (NiO) potentially has a broad perspective in optical applications due to their relatively wide bandgap, high mobility, high transparency, remarkably good electrical and optical characteristics. It is foreseeable in the future that the unique applicability of RRAM in UV will make its headway as a key component in many optoelectronic displaying products. The present study focuses on using Radio Frequency Magnetron Sputtering method to prepare NiO active layer and indium tin oxide (ITO) top electrode for the realization of RRAM devices and their current-voltage (I-V) and capacitance-voltage (C-V) characteristics are subsequently evaluated with and without the irradiation of ultraviolet light. Specifically, a series of reliability tests show that the fabricated memories have endured up to 100 switching cycles and the current contrast ratio between high (HRS) and low (LRS) resistance state at 0.1V has achieved more than two orders of magnitude. Furthermore, the retention time measurement has also demonstrated that the memory storage capability of these RRAMs remains in excellent operating condition after surviving more than 10,000 seconds of the test. Major attention is concentrated on finding out a correlation between the UV responsivity and switching characteristics for NiO RRAMs biased at low voltage. We found that the memory states associated with the RRAM of the smallest feature sizes could be toggled relatively easily by UV irradiation at the smallest size.
The integration of the transparent ITO/NiO/ITO Resistive Random-Access Memory (ReRAM) with vertically-coupled bus waveguides, which is ultimately emerged as a ReRAM-based microdisk resonator fabricated on lithium niobate (LiNbO3) substrate, is successfully realized. The transparent ITO and NiO layers are deposited by radio-frequency sputtering technique, while the bus waveguides in LiNbO3 is achieved by a proton-exchange method. The ReRAM-based microdisk resonator thus designed and fabricated have dual functionality of memory and optical spectral filtering capabilities. When the ReRAM microdisk resonator is electronically set at different memory states, that is, ReRAM is alternatively set in high-resistance state (HRS) and low-resistance state (LRS), the corresponding spectral shifts detected at both through and drop ports are noticeable different, when compared with those obtained before and after subjecting the ReRAM to a required forming process. Specifically, the spectral shift associated with the LRS state of ReRAM between the through and drop port terminal is around 4.4 nm, as compared to the spectral shift of approximately 1.7 nm that is associated with the HRS state of ReRAM between the same two terminals. The aforementioned characteristics of selective light wave filtering can be selectively tuned by varying the ReRAM device dimensions. The adoption of the different thin-film materials for the ReRAM fabrication may also play an important role in spectral tuning. Most important of all, because of different spectral shifts observed, the particular memory state of ReRAM could possibly and uniquely be interrogated by an optical means. The resultant discovery opens a new pathway in the future to the realization of one of the new optical memory devices.
Highly reliable and low-cost long-period corrugation and phase gratings based on a cascade of phase-shifted lithium niobate waveguides are theoretically analyzed, experimentally realized and characterized in a logical sequence. The realization of these phase-shifted waveguide gratings (LPWG) is subsequently achieved via a two-step proton exchange method. The measurement results have demonstrated that the maximum dip contrast is up to 19.73 dB and the narrowest full-width-at-half-maximum (FWHM) is close to 2.34 nm. Furthermore, for the cascaded pi-phase-shifted long-period waveguide gratings (LPWG), the two resonance wavelengths are symmetrically shifted away from the center wavelength in response to an increase in the number of LPWG sections incorporated.
KEYWORDS: Sputter deposition, Thin films, Zinc oxide, Molybdenum, Nanocomposites, Transmittance, Chemical species, Thin film deposition, Chemical elements, Chemical analysis
A molybdenum (Mo)-doped zinc oxide thin film is deposited on a glass substrate by a rf magnetron sputtering technique. The structural and optical characteristics of ZnO:Mo (ZMO) thin films prepared with various deposition parameters are investigated. A series of SEM images obtained reveal that the average grain size of ZMO thin films is small and uniform. Energy dispersive spectroscopy analysis also verifies that traces of Mo are present in the as-grown thin films. The thicknesses of these ZMO films ranging from 150 to 390 nm are obtained by varying pertinent sputtering parameters. The average transmittance of ZMO thin films measured is more than 80% in the visible spectrum.
High-temperature stability of lasing wavelength of GaAsSb/GaAs quantum well (QW) lasers grown by metal-organic
vapor phase epitaxy will be demonstrated. According to the best of our knowledge, this is the first trial of using
triethylgallium (TEGa) as the precursor to grow QW at low temperature (525°C). The lasing wavelength ranges from
1117 to 1144 nm and varies with temperature (dλ/dT) from 0.24 to 0.287 nm/K. These values are lower than other
previously reported results. The QW grown at high temperature (600 °C) by using trimethylgallium (TMGa) is also
examined. The lasing wavelength is 1125.6 nm at room temperature and dλ/dT is 0.36 nm/K, which is higher than those
lasers grown at lower temperature.
The RF-sputtered ITO layers were used as the transparency contact layer of the MSM PDs. The plasma gas would alter
the optical transmittance and the schottky barrier height between the ITO layer and InGaAsN absorption layer. Three
kinds of plasma gases were studied including Ar, Ar/N2, and Ar/O2. The Schottky barrier heights were 0.510 eV, 0.572
eV, and 0.574 eV when using Ar, (Ar/N2), and (Ar/O2) as the plasma gas; besides, the optical transmittances were
92.56%, 93.12% and 96%, respectively. Although the ITO film sputtered in the Ar/O2 ambient has highest transmittance
and Schottky barrier height, the high resistivity limited the photocurrent of the photodetectors; it is almost three orders
lower than the others. Consequently, using the Ar/N2 as the plasma gas would be a suitable choice regarding the MSM
photodetector application. The highest contrast ratio between photo-current and dark-current of the InGaAsN MSM
photodetectors were 5, 25 and 12 (measured under 0.2V) using Ar, Ar/N2, and Ar/O2 as the plasma gases.
The fabrication and characterization of the p-i-n optical waveguide modulators on silicon-on-insulator (SOI) substrate
were demonstrated. The modulation was based on the mechanism of carrier injection, or plasma dispersion effect. The
corresponding p and n regions were defined in both types of silicon substrates (conventional p-doped and highly resistive
SOI substrates with respective resistivities of &rgr;~7-10&OHgr;-cm and &rgr;~7000-10000&OHgr;-cm) using the spin-on-dopant (SOD)
technique. The SOD diffusion process was conducted at 900-1000°C in nitrogen ambient. The diffusion time and
temperature, and the resistivity of SOI substrate used were the primary parameters dictating the resultant dopant
concentrations and diffusion depths. For the modulators fabricated with various waveguide widths and electrode lengths,
the corresponding modulation index was enhanced in response to an increase in the electrode (or modulation) length
and/or a decrease in waveguide width. The highest modulation index of ~4.15% was successfully achieved for a silicon
p-i-n waveguide modulator with 5&mgr;m,wide waveguide and 7mm-long modulation electrode.
Thermal management is now a critical problem for applications of high power light emitting diodes (LEDs).
This paper develops a novel LEDs (Fig.1a) package technique that can overcome thermal problem, and the
ability to drive the red LEDs at higher power. Copper is plated on the AlInGaP-based red LED chip directly, and
the thermal resistance from chip to the metal heat sink is decreased greatly. With the copper plating layer, the
working current of the AlInGaP-based red LED can be increased from conventional 350 mA to 1650mA in room
temperature. It was found that the luminous intensity at 350 and 1050 mA of the novel package LEDs showed
53% and 431% enhancement as compared with those of the conventional package ones (Fig.1b). The electrical
and optical characteristics of two kind's packages were shown in Figure 2 and Figure 3, respectively.
Recently, GaAs-based long wavelength lasers have attracted much attention owing to their advantages such as low
substrate cost, mature AlGaAs/GaAs DBR and the high conduction band offset. Among the GaAs-based material system,
highly compressive strained InGaAs would be a suitable candidate for the 1300nm VCSEL application while combined
with the large gain-cavity detuning technique. In this work, we have successfully fabricated the highly compressivestrained
InGaAs broad-area lasers grown by MOVPE. After optimized the epitaxial parameters, these lasers were
operating at 1219.56nm with narrow line width of 0.08nm. The InGaAs laser could be operated under continuously
waving (CW) situation at 20°C, while its threshold current density Jth was 140A/cm2. To our knowledge, the
demonstrated InGaAs QW laser has the lowest Jth/QW =46.7 A/cm2. The fitted characteristic temperature (T0) was
146.2K indicating the good electron confinement ability. In addition, by lowering the growth temperature to 475°C, we
have also obtained the InGaAs/GaAs double quantum wells whose PL peak was at 1244.5nm and FWHM was 43meV.
These good characteristics indicate the possibility of fabricating InGaAs VCSELs lasing at 1300nm.
The Jet Propulsion Laboratory (JPL) is developing a 512x640-format, dual broadband, Quanum Well Infrared Photodetector (QWIP) focal plane array (FPA) for an imaging interferometer. This is a new type of imaging interferometer which is based on special Fourier-transform spectroscopy, scans interferograms digitally without moving any optical components. It is stable enough to measure fluctuating target signatures from unstable platforms, making it ideal for detecting chemical agents from a remotely piloted aircraft. These static interferometers require large-format FPAs with high uniformity and operability. QWIP technology is ideal for this instrument because it has achieved remarkable success in advancing highly uniform, highly-operability, and large-format multicolor FPAs. The FPA used in the interferometer covers the wavelength from 6-10 μm and 10-15 μm in alternative rows.
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