Crystal growth and haze formation on photomasks become serious problems in UV lithography. As the
wavelength becomes shorter, photons carry more energy, so the chances of having a photochemical reaction become
much higher. Pellicle, adhesive, residue from cleaning or resist strip process, and any contaminant in air can react with
UV to form unwanted crystals and a haze layer on reticles. These will reduce the light transmission during exposure
process. Thus, frequent mask inspection and periodic mask cleaning are needed to overcome these problems. However,
these will in turn increase manufacturing cost and reduce mask life. Thus, a proper mask inspection tool is required to
provide early warning of haze formation. In this work, we devised a new ellipsometric technique to investigate the inner
surface of mask without removing pellicle. Ellipsometry is known to have mono-layer sensitivity and it can be used to
measure any film or partial film formed on non-patterned spot in early stage of growth. However, when a pellicle covers
the surface of mask, the ellipsometric data reflected from surface are extremely distorted due to the non-normal
transmission through the pellicle. Thus, data analysis becomes extremely difficult without knowing the optical
properties of pellicles. In order to solve this problem we developed compensation technique in which two blank pellicles
are situated in the optical path in a way to compensate the polarization changes caused by the pellicle on mask. With this
method, the conventional ellipsometry spectra of {Δ, Ψ} are deduced.
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