Prof. Shoou-Jinn Chang Profile

Prof. Shoou-Jinn Chang

at National Cheng Kung Univ

SPIE Involvement:

Author

SPIE Journal Paper | 9 July 2015

Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses

Ying-Wen Lin, Chun-Kai Wang, Yu-Zung Chiou, Hung-Ming Chang, Shoou-Jinn Chang

JPE, Vol. 5, Issue 01, 057612, (July 2015) https://doi.org/10.1117/12.10.1117/1.JPE.5.057612

KEYWORDS: Light emitting diodes, Quantum wells, Polarization, Blue light emitting diodes, Indium gallium nitride, Electroluminescence, Gallium nitride, Aluminum, Sapphire, Gallium

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SPIE Journal Paper | 9 March 2015

Effects of microcell layout on the performance of GaN-based high-voltage light-emitting diodes

Shuguang Li, Kin-Tak Lam, Wei-Chih Huang, Shoou-Jinn Chang

JPE, Vol. 5, Issue 01, 057605, (March 2015) https://doi.org/10.1117/12.10.1117/1.JPE.5.057605

KEYWORDS: Light emitting diodes, Metals, Electroluminescence, External quantum efficiency, Energy efficiency, Gallium nitride, Internal quantum efficiency, Temperature metrology, Thermography, Lithium

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SPIE Journal Paper | 19 February 2015

Effects of last barrier thickness on the hot–cold factor of GaN-based light-emitting diodes

Qiuping Luan, Kin-Tak Lam, Shoou-Jinn Chang

JPE, Vol. 5, Issue 01, 057602, (February 2015) https://doi.org/10.1117/12.10.1117/1.JPE.5.057602

KEYWORDS: Light emitting diodes, Gallium nitride, Temperature metrology, Electron beam lithography, Gallium, Semiconducting wafers, Quantum wells, Indium, Surface finishing, Aluminum

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Proceedings Article | 6 August 2014 Paper

Energy transfer mechanisms in green emitting LiBaPO4:Tb3+ phosphors

Ru-Yuan Yang, Hsuan-Lin Lai, Yu-Ming Peng, Shoou-Jinn Chang

Proceedings Volume 9232, 92320Z (2014) https://doi.org/10.1117/12.2065346

KEYWORDS: Ions, Energy transfer, Solid state physics, Luminescence, Terbium, Scanning electron microscopy, Quenching (fluorescence), Crystals, X-ray diffraction, Solid state electronics

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Proceedings Article | 6 February 2012 Paper

GaN-based LEDs with air voids prepared by laser scribing and chemical etching

S. J. Chang

Proceedings Volume 8278, 82781E (2012) https://doi.org/10.1117/12.913294

KEYWORDS: Light emitting diodes, Gallium nitride, Etching, Semiconducting wafers, Metalorganic chemical vapor deposition, Wet etching, Sapphire, Interfaces, Chemical lasers, External quantum efficiency

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Proceedings Article | 12 March 2010 Paper

The comprehensive characteristics of quaternary AlInGaN with various TMI molar rate

Sheng-Fu Yu, Shoou-Jinn Chang, Sheng-Po Chang, Ray-Ming Lin

Proceedings Volume 7602, 76020B (2010) https://doi.org/10.1117/12.840824

KEYWORDS: Gallium nitride, Crystals, Crystal optics, Indium, Aluminum, Metalorganic chemical vapor deposition, Surface roughness, Light emitting diodes, Electrical engineering, Light sources and illumination

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Proceedings Article | 8 February 2007 Paper

Low-threshold current low-resistance 1.3 µm InAs–InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE

Hsin-Chieh Yu, Jyh-Shyang Wang, Yan-Kuin Su, Shoou-Jinn Chang, Hao-Chung Kuo, Fang-I Lai, Y. H. Chang, Hong-Pin Yang

Proceedings Volume 6484, 64840E (2007) https://doi.org/10.1117/12.697732

KEYWORDS: Vertical cavity surface emitting lasers, Resistance, Indium arsenide, Zinc, Modulation, Diffusion, Indium gallium arsenide, Etching, Quantum wells, Metals

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Proceedings Article | 11 July 2000 Paper

II-VI light emitting diode with low operation voltage

Wen-Hou Lan, Y. Cheng, Alpha Lin, Horng Chang, Wen Ray Chen, Yan-Kuin Su, Shoou-Jinn Chang, W. Chou, Chu-Shou Yang

Proceedings Volume 4078, (2000) https://doi.org/10.1117/12.392190

KEYWORDS: Light emitting diodes, Quantum wells, Gallium arsenide, Diodes, Metals, Resistance, Annealing, Etching, Blue light emitting diodes, Tellurium

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Proceedings Article | 17 April 2000 Paper

Long-wavelength shift of ZnSSe metal-semiconductor-metal light-emitting diodes with high injection currents

Yan-Kuin Su, Wen Ray Chen, Shoou-Jinn Chang, Fuh-Shyang Juang, W. Lan, Alpha Lin, Horng Chang

Proceedings Volume 3938, (2000) https://doi.org/10.1117/12.382832

KEYWORDS: Light emitting diodes, Metals, Diodes, Interfaces, Electroluminescence, Electrons, Zinc, Copper, Etching, Semiconductor lasers

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Proceedings Article | 17 April 2000 Paper

Ohmic contacts to GaN with rapid thermal annealing

L. Chi, Kin Lam, Y. Kao, Fuh-Shyang Juang, Y. Tasi, Yan-Kuin Su, Shoou-Jinn Chang, C. Chen, J. Sheu

Proceedings Volume 3938, (2000) https://doi.org/10.1117/12.382834

KEYWORDS: Gallium nitride, Metals, Resistance, Annealing, Semiconductors, Nickel, Gold, Palladium, Platinum, Interfaces

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Proceedings Article | 17 April 2000 Paper

Effects of buffer layer growth conditions on the GaN epilayer quality by MOCVD

Fuh-Shyang Juang, Yan-Kuin Su, Shoou-Jinn Chang, T. Chu, C. Chen, L. Chi, Kin Lam

Proceedings Volume 3938, (2000) https://doi.org/10.1117/12.382833

KEYWORDS: Gallium nitride, Luminescence, Spatial light modulators, Metalorganic chemical vapor deposition, Helium cadmium lasers, Optical properties, Sapphire, Light emitting diodes, Crystals, Electro optics

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Proceedings Article | 22 June 1998 Paper

Near-band-edge optical properties of MBE-grown ZnSe epilayers on GaAs by modulation spectroscopy

Ru-Chin Tu, Yan-Kuin Su, Ying-Sheng Huang, Shoou-Jinn Chang

Proceedings Volume 3419, 341913 (1998) https://doi.org/10.1117/12.311024

KEYWORDS: Gallium arsenide, Optical properties, Modulation, Spectroscopy, Interfaces

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Proceedings Article | 22 June 1998 Paper

Dark current mechanisms in HgCdTe photodiodes

Yan-Kuin Su, Shoou-Jinn Chang, Fuh-Shyang Juang, C. Chiang, Y. Cherng, S. Chang

Proceedings Volume 3419, 34190W (1998) https://doi.org/10.1117/12.311016

KEYWORDS: Photodiodes, Mercury cadmium telluride, Temperature metrology, Signal to noise ratio, Mercury, Cadmium, Tellurium, Diffusion, Diodes

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Proceedings Article | 26 October 1994 Paper

Preparation of SiO2 film by direct photo-CVD on strained SiGe layer

C. Lin, Yan-Kuin Su, Shoou-Jinn Chang, D. Nayak, Y. Shiraki

Proceedings Volume 2364, (1994) https://doi.org/10.1117/12.190739

KEYWORDS: Silicon, Oxides, Germanium, Lamps, Molybdenum, Diodes, Chemical species, Silica, Chemical vapor deposition, Oxidation

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Showing 5 of 14 publications

Conference Committee Involvement (4)

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII

4 February 2013 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI

24 January 2012 | San Francisco, California, United States

Gallium Nitride Materials and Devices VII

23 January 2012 | San Francisco, California, United States

Gallium Nitride Materials and Devices VI

24 January 2011 | San Francisco, California, United States

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