Dr. Soon Mok Ha Profile

Dr. Soon Mok Ha

Principal Engineer at SAMSUNG Electronics Co Ltd

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Publications (10)

Proceedings Article | 10 April 2024 Paper

EUV source pole control for LCDU and CD ellipticity handling in hexagonal contact arrays

Jieun Song, Janghun Kim, Hyung Jong Bae, Sudeok Kim, Soonmok Ha, Woojin Jung, Seokwon Cho, Jeounghun Park, Dohyeon Park, Eunji Lee, Minseung Song, Hyunseung Ha, Keesun Han, Young Joo Choi, Gyeongseok Park, Seongbo Shim, Chan Hwang

Proceedings Volume 12953, 1295309 (2024) https://doi.org/10.1117/12.3010718

KEYWORDS: Extreme ultraviolet, Mirrors, Light sources and illumination, Semiconducting wafers, Simulations, Nanoimprint lithography, Metrology, Critical dimension metrology, Source mask optimization, Phase shifts

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Proceedings Article | 4 April 2012 Paper

New analytical algorithm for overlay accuracy

Boo-Hyun Ham, Sangho Yun, Min-Cheol Kwak, Soon Mok Ha, Cheol-Hong Kim, Suk-Woo Nam

Proceedings Volume 8324, 83240A (2012) https://doi.org/10.1117/12.918002

KEYWORDS: Overlay metrology, Semiconducting wafers, Scanners, Data modeling, Metrology, Error analysis, Front end of line, Back end of line, Photomasks, Nondestructive evaluation

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The extension of optical lithography to 2Xnm and beyond is often challenged by overlay control. With reduced overlay measurement error budget in the sub-nm range, conventional Total Measurement Uncertainty (TMU) data is no longer sufficient. Also there is no sufficient criterion in overlay accuracy. In recent years, numerous authors have reported new method of the accuracy of the overlay metrology: Through focus and through color. Still quantifying uncertainty in overlay measurement is most difficult work in overlay metrology. According to the ITRS roadmap, total overlay budget is getting tighter than former device node as a design rule shrink on each device node. Conventionally, the total overlay budget is defined as the square root of square sum of the following contributions: the scanner overlay performance, wafer process, metrology and mask registration. All components have been supplying sufficiently performance tool to each device nodes, delivering new scanner, new metrology tools, and new mask e-beam writers. Especially the scanner overlay performance was drastically decreased from 9nm in 8x node to 2.5nm in 3x node. The scanner overlay seems to reach the limitation the overlay performance after 3x nod. The importance of the wafer process overlay as a contribution of total wafer overlay became more important. In fact, the wafer process overlay was decreased by 3nm between DRAM 8x node and DRAM 3x node. We develop an analytical algorithm for overlay accuracy. And a concept of nondestructive method is proposed in this paper. For on product layer we discovered the layer has overlay inaccuracy. Also we use find out source of the overlay error though the new technique. In this paper, authors suggest an analytical algorithm for overlay accuracy. And a concept of non-destructive method is proposed in this paper. For on product layers, we discovered it has overlay inaccuracy. Also we use find out source of the overlay error though the new technique. Furthermore total overlay error data is decomposed into two parts: the systematic error and the random error. And we tried to show both error components characteristic, systematic error has a good correlation with residual error by scanner condition, whereas, random error has a good correlation with residual error as going process steps. Furthermore, we demonstrate the practical using case with proposed method that shows the working of the high order method through systematic error. Our results show that to characterize an overlay data that is suitable for use in advanced technology nodes requires much more than just evaluating the conventional metrology metrics of TIS and TMU.

Proceedings Article | 4 April 2012 Paper

A comparison of alignment and overlay performance with varying hardmask materials

Sangho Yun, Soon Mok Ha, Young Min Nam, Cheol-Hong Kim, Suk-Woo Nam

Proceedings Volume 8324, 832407 (2012) https://doi.org/10.1117/12.917412

KEYWORDS: Optical alignment, Refractive index, Overlay metrology, Etching, Optical lithography, Resistance, Signal attenuation, Carbon, Lithography, Semiconducting wafers

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Proceedings Article | 10 April 2008 Paper

Self-clearable carbon nanotube electrodes for improved performance of dielectric elastomer actuators

Wei Yuan, Liangbing Hu, Soonmok Ha, Tuling Lam, George Grüner, Qibing Pei

Proceedings Volume 6927, 69270P (2008) https://doi.org/10.1117/12.776809

KEYWORDS: Electrodes, Single walled carbon nanotubes, Carbon, Dielectrics, Dielectric breakdown, Actuators, Carbon nanotubes, Dielectric elastomer actuators, Resistance, Resistors

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Proceedings Article | 10 April 2008 Paper

Polyaniline nanofibers as a novel electrode material for fault-tolerant dielectric elastomer actuators

Tuling Lam, Henry Tran, Wei Yuan, Zhibin Yu, SoonMok Ha, Richard Kaner, Qibing Pei

Proceedings Volume 6927, 69270O (2008) https://doi.org/10.1117/12.776817

KEYWORDS: Electrodes, Nanofibers, Actuators, Dielectric elastomer actuators, Scanning electron microscopy, Dielectrics, Dielectric breakdown, Digital cameras, Resistance, Thin films

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Proceedings Article | 10 April 2008 Paper

High electromechanical performance of electroelastomers based on interpenetrating polymer networks

Soon Mok Ha, Il Seok Park, Michael Wissler, Ron Pelrine, Scott Stanford, Kwang Kim, Gabor Kovacs, Qibing Pei

Proceedings Volume 6927, 69272C (2008) https://doi.org/10.1117/12.778282

KEYWORDS: Polymers, Actuators, Mechanical efficiency, Composites, Artificial muscles, Polymer thin films, Dielectrics, Energy efficiency, Electronic circuits, Electroactive polymers

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Proceedings Article | 10 April 2008 Paper

Study on core free rolled actuator based on soft dielectric EAP

Gabor Kovacs, Soon Mok Ha, Silvain Michel, Ron Pelrine, Qibing Pei

Proceedings Volume 6927, 69270X (2008) https://doi.org/10.1117/12.776787

KEYWORDS: Actuators, Dielectrics, Electroactive polymers, Electrodes, Polymers, Manufacturing, Polymer thin films, Energy efficiency, Multilayers, Reliability

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Proceedings Article | 11 April 2007 Paper

New electrode materials for dielectric elastomer actuators

Wei Yuan, Tuling Lam, James Biggs, Liangbing Hu, Zhibin Yu, Soonmok Ha, Dongjuan Xi, Matthew Senesky, George Grüner, Qibing Pei

Proceedings Volume 6524, 65240N (2007) https://doi.org/10.1117/12.715383

KEYWORDS: Electrodes, Single walled carbon nanotubes, Actuators, Resistance, Dielectrics, Polymers, Dielectric elastomer actuators, Dielectric breakdown, Silicon, Reliability

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Proceedings Article | 4 April 2007 Paper

Characterization of electroelastomers based on interpenetrating polymer networks

Soon Mok Ha, Michael Wissler, Ron Pelrine, Scott Stanford, Gabor Kovacs, Qibing Pei

Proceedings Volume 6524, 652408 (2007) https://doi.org/10.1117/12.715061

KEYWORDS: Polymers, Actuators, Polymeric actuators, Glasses, Dielectrics, Polymerization, 3D modeling, Data modeling, System on a chip, Electroactive polymers

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Proceedings Article | 17 March 2006 Paper

New high-performance electroelastomer based on interpenetrating polymer networks

Soon Mok Ha, Wei Yuan, Qibing Pei, Ron Pelrine, Scott Stanford

Proceedings Volume 6168, 616808 (2006) https://doi.org/10.1117/12.657684

KEYWORDS: Polymers, Composites, Polymer thin films, Actuators, FT-IR spectroscopy, Dielectric breakdown, Polymeric actuators, Polymerization, Dielectrics, Interfaces

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Showing 5 of 10 publications

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