With a sub-nanometric resolution required for nodes below 14 nm, according to the International Roadmap for Devices and Systems (IRDS), exploring new overlay characterization methods is key to drive further component size reduction and develop better-performing technologies. In this work, we present our first Small-Angle x-ray Scattering (SAXS) results of overlay measurements on stacks of silicon line gratings. Our method, novel for SAXS overlay measurements, is based on inverse problem resolution and reconstructs the in-depth profile (approximated as a stack of trapezoids) of the structure. We are thus able to extract overlay with SAXS with a very fine sensitivity, high precision and sub-nanometric resolution that suit the requirements for advanced technological nodes. We compared these results with those of Scanning Electron Microscopy (SEM) contour-based on product overlay. The reconstructed structures are compared to profiles obtained with Scanning Transmission Electron Microscopy (STEM). From the differences between these multi-scale techniques we can conclude on the high potential of SAXS to become a complementary to those existing, and assess its potential for advanced technology nodes.
Critical dimension control is essential in the semiconductor industry and becomes more challenging as photolithography limits keep getting pushed to reach technological nodes smaller than 10 nm. To ensure the quality and control of the processes, it becomes necessary to explore new metrology techniques. In this sense, critical dimension small-angle x-ray scattering (CDSAXS) has been identified as a potential candidate for determining the average shape of a line grating with a sub-nanometric precision. We benchmark the CDSAXS results obtained at the synchrotron to the optical critical dimension, critical dimension scanning electron microscopy, and transmission electron microscopy measurements collected from industrial metrology tools either at the manufacturing line or in the characterization laboratory. Emphasis is placed on the impact of the use of independent model for each technique and the benefits of unifying it in a unique model. We also discuss the differences between all of these multi-scale and multi-physics techniques, question our capacity to compare them, and eventually correlate the results obtained on several samples.
Critical Dimension (CD) control is essential in the semiconductor industry and becomes more challenging as photolithography limits keep getting pushed to reach technological nodes smaller than 10 nm. To ensure quality and control of the processes, it becomes necessary to explore new metrology techniques. In this sense, Critical Dimension Small-Angle X-ray Scattering (CDSAXS) has been identified as a potential candidate to determine the average shape of a line grating with a sub-nanometric precision. In this paper we benchmark the CDSAXS results to Optical Critical Dimension (OCD), Critical Dimension Scanning Electron Microscopy (CDSEM) and Transmission Electron Microscopy (TEM) measurements previously collected from industrial metrology tools at manufacturing line and in characterization laboratory. Emphasis is placed on the model used for CDSAXS and how to improve it. We discuss the differences between all these multi-scale and multi-physics techniques, and question our capacity to compare them.
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