Mr. Uiseok Jeong Profile

Uiseok Jeong

at Korea Univ

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Proceedings Article | 26 February 2020 Paper

Low voltage 12 GHz silicon optical electro-absorption modulator (EAM) using a Schottky diode for optical interconnectors in the C-band

Uiseok Jeong, Kwangwoong Kim, Kyungwoon Lee, Jinsik Kim, Jung Ho Park

Proceedings Volume 11285, 112851L (2020) https://doi.org/10.1117/12.2542479

KEYWORDS: Modulators, Silicon, Waveguides, Modulation, Diodes, Absorption, Electrodes, Eye, Indium, Electro optics

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A silicon optical electro-absorption modulator (EAM) operating at a high speed and low voltage was achieved by using a Schottky diode in the C-band (1530 nm ~ 1570 nm). The optical modulation is demonstrated by the intensity change of guiding light due to the free-carrier absorption in the semiconductor to change its absorption coefficient, not conventional interference effects. The proposed EAM has lateral metal-semiconductor (MS) junctions that aid in maximizing the free carrier injection and extraction by a Schottky contact on the rib waveguide center. The rib waveguide structure of the modulator on the standard 220-nm silicon-on-insulator (SOI) platform has an etch depth of 80 nm and a width of 450 nm for the single-mode operation. The center of the rib waveguide is lightly doped with 1015 cm-3 indium, where light is mostly confined. The sides are heavily doped with 1020 cm-3 indium to contribute to the optical absorption change in the center. The depletion width in the middle region was drastically changed by a Schottky contact with bias. This design allowed a high overlap between the optical mode and carrier density variations in the center of the waveguide. To achieve a high speed operation, the travelling-wave type electrodes were designed to allow copropagation of electrical and optical signals along the waveguide. The measured results demonstrated a broad operational wavelength range of 40 nm with a uniform 3.9 dB modulation depth for a compact 25 μm modulation length with 1 Vpp driving voltage. The travelling-wave type electrodes enabled the modulator operating up to 26 GHz with 12 GHz of 3-dB electrooptic bandwidth, experimentally.

Proceedings Article | 8 March 2014 Paper

A broadband silicon electro-absorption modulator (EAM) using a Schottky diode

Uiseok Jeong, Dongchul Han, Dong Ho Lee, Kyungwoon Lee, J. Kim, Jung Ho Park

Proceedings Volume 8988, 89881M (2014) https://doi.org/10.1117/12.2038800

KEYWORDS: Modulation, Modulators, Waveguides, Silicon, Diodes, Absorption, Phosphorus, Electrodes, Electrons, Etching

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A silicon optical modulator operating at high speed and low voltage is proposed by using a Schottky diode. The optical modulation is achieved by the intensity change of guiding light due to free-carrier absorption, not conventional interference effects. The rib waveguide structure of the modulator has a height of 340 nm, a etch depth of 150 nm, a width of 4.8 μm, and a modulation length of 500 μm. It was designed to maximize the free carrier injection by a Schottky contact on the rib waveguide center. The center of the rib waveguide is lightly doped with phosphorus of 10¹⁶ cm⁻³, and the sides are heavily doped with phosphorus of 10²⁰ cm⁻³ to improve modulation depth by injecting free carriers into the center of the rib waveguide. This design allowed a high overlap between the optical mode and carrier density variations in the center of the waveguide. To achieve high speed operation, travelling-wave type electrodes were designed to allow co-propagation of electrical and optical signals along the waveguide. The device simulated results demonstrate a 3.3 dB modulation depth for a 500 μm modulation length with 3 V_pp driving voltages. We demonstrated a Schottky modulator operating Si EAM at 3 V_pp with a 3 dB bandwidth of 7 GHz.

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