Dr. Wenbing Kang Profile

Dr. Wenbing Kang

at Merck Electronics Ltd

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Author

Publications (7)

Proceedings Article | 28 May 2004 Paper

Developable bottom antireflective coatings for 248-nm and 193-nm lithography

Tomohide Katayama, Hisashi Motobayashi, Wen-Bing Kang, Medhat Toukhy, Joseph Oberlander, Shuji Ding, Mark Neisser

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537539

KEYWORDS: Lithography, Silicon, Semiconducting wafers, 193nm lithography, Polymers, Bottom antireflective coatings, Dry etching, Process control, Electroluminescence, Absorbance

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Proceedings Article | 14 May 2004 Paper

Application of photosensitive BARC and KrF resist on implant layers

D.C. Owe-Yang, Bang-ching Ho, Shinji Miyazaki, Tomohide Katayama, Kenji Susukida, Wenbing Kang, Yung-Cheng Chang

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534735

KEYWORDS: Critical dimension metrology, Photoresist processing, Lithography, Dry etching, Semiconducting wafers, Antireflective coatings, Bottom antireflective coatings, Reflection, Plasma etching, Chemically amplified resists

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The IC industry is moving toward 90nm node and below. The CD size of implant layers has shrunk to 220nm. To achieve better CD uniformity, dyed KrF resist and top anti-reflective coating (TARC) are commonly used in advanced photo process of implant layers. It’s well known that bottom anti-reflective coating (BARC) has better reflection control over TARC. However, dry etching process is required if typical organic BARC is applied to photo process of implant layers. It is undesirable for two reasons. The first reason is the substrate damage caused by plasma etching could affect the device performance. The second reason is higher cost due to additional processing steps. In order to overcome those two shortcomings, developable BARC (DBARC) is introduced. It is a new type of BARC, which is soluble to developer, TMAH solution, in the resist development step. There are some reports on the developer-soluble KrF BARC. Most of them are polyamic acid and their solubility to alkline could be adjusted by changing bake condition. However, its development is isotropic, which make it difficult to get a vertical profile. Therefore, we have developed a photosensitive developer-soluble BARC (DBARC) which is anisotropic after exposure and thus results in a nice vertical profile. The photosensitive DBARC utilizes the same concept as chemically amplified resist. It has acid-cleavable groups in the resin and PAGs in the formulation. The photosensitive DBARC turns soluble to TMAH developer after exposure and resist PEB. The solubility difference caused by exposure makes developing process anisotropic and thus improves profile control. In this article, we will report the evaluation results of various combinations of KrF resists and DBARC for implant layers. Since both the resist and DBARC are photosensitive, matching of the photo speeds of them is essential. The amount and type of PAG in both the resist and the DBARC play a very import role. Finally, the optimized combination showed acceptable lithography process window and good CD uniformity over topography.

Proceedings Article | 14 May 2004 Paper

Acid diffusion characteristics of RELACS coating for 193nm lithography

Sungeun Hong, Takeshi Nishibe, Tetsuo Okayasu, Kiyohisa Takahashi, Yusuke Takano, Wenbing Kang, Hatsuyuki Tanaka

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534612

KEYWORDS: Polymers, Diffusion, Photoresist processing, Molecules, Coating, Polymer thin films, Interfaces, 193nm lithography, Chemically amplified resists, Hydrogen

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Proceedings Article | 24 July 2002 Paper

Development of 193-nm B.A.R.C.s for dual damascene applications

Hengpeng Wu, Zhong Xiang, Eleazar Gonzalez, Jianhui Shan, Shuji Ding, Wen-Bing Kang, Aritaka Hishida

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474188

KEYWORDS: Semiconducting wafers, Polymers, Etching, Copper, Photoresist materials, Optical lithography, Fourier transforms, Aluminum, Dielectrics, Glasses

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Proceedings Article | 23 June 2000 Paper

Optimization of bottom antireflective coating materials for dual damascene process

Shuji Ding, Wen-Bing Kang, Hatsuyuki Tanaka, Sunit Dixit, Ronald Eakin, Jianhui Shan, Eleazar Gonzalez, Ying Liu, Dinesh Khanna

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388377

KEYWORDS: Polymers, Etching, Deep ultraviolet, Semiconducting wafers, Coating, Fourier transforms, Lithography, Thin film coatings, Bottom antireflective coatings, Silicon

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Proceedings Article | 11 June 1999 Paper

Bottom antireflective coatings for ArF, KrF, and i-line applications: a comparison of theory, design, and lithographic aspects

Munirathna Padmanaban, Shuji Ding, Stanley Ficner, Wen-Bing Kang, Dinesh Khanna, Ralph Dammel

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350238

KEYWORDS: Reflectivity, Bottom antireflective coatings, Lithography, Molecules, Absorption, Thin film coatings, Etching, Photoresist materials, Silicon, Polymers

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Proceedings Article | 29 June 1998 Paper

Chemical and lithographic aspects of organic deep-UV BARCs

Munirathna Padmanaban, Wen-Bing Kang, Ken Kimura, Yoshino Nishiwaki, Georg Pawlowski, Hatsuyuki Tanaka

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312410

KEYWORDS: Deep ultraviolet, Etching, Lithography, Polymers, Reflectivity, Absorption, Photoresist materials, Silicon, Photoresist processing, Interfaces

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Showing 5 of 7 publications

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