This work presents a disordered metadiffuser that can achieve a uniform angular scattering distribution with a numerical aperture (NA) of 0.85 at a working wavelength of λ=532 nm, as demonstrated through simulations using the Gerchberg- Saxton algorithm. Additionally, we demonstrate the capability of the metadiffuser to achieve near diffraction-limit high NA focusing (NA>0.8) through the use of a spatial light modulator and the optical phase conjugation method for wavefront shaping. Finally, we propose a deep ultraviolet (DUV) model-based optical proximity correction (OPC) system that uses optical and photoresist simulations via Hopkins’s partially coherent image formation and fully convolutional networks (FCN). This system enables larger-area device fabrication with DUV lithography while maintaining precise critical dimension (CD) of meta atoms. The proposed OPC system achieves a lithography accuracy with an average ΔCD/CD of 0.235%. These results offer promising implications for the practical application of metadiffusers and the DUV lithography technique in the field of optical devices.
Dielectric metalenses realized by economic photolithography technology are vital to their mass deployment in optoelectronic applications. However, pattern fidelity has become a serious issue that degrades the device performance due to optical proximity effects. Here, we demonstrate an intelligent reticle modification system which modifies the sizes and shapes of designed patterns based on a neural-network U-net lithographic model to produce nanostructures with desired dimensions. We demonstrate 2 mm-diameter visible metalenses with diffraction-limited focusing using DUV KrF 248 nm photolithography. This work bridges between the semiconductor process and lens-making industries to realize high-volume manufacturing of versatile metalens and metasurface products.
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