With the demand for back-illuminated CMOS/CCD and electron bombardment imaging devices, the requirement for chip thickness has become the key to various imaging device fabrication techniques. In this paper, the back of semiconductor silicon wafer was thinned by means of mechanical grinding and wet etching. The thinned chip was tested by the step meter and atomic force microscope. The chip thinning technology realizes the thickness of 15 μm, which provides technical support for the preparation of backlight imaging devices or electron bombardment imaging devices.
According to the interaction model between low-energy electrons and solids, combined with Monte Carlo calculation method, MATLAB software was used to simulate the electron scattering trajectories of a large number of photoelectrons incident on EBCMOS substrates. The energy loss rate of different incident photoelectrons on the substrate was analyzed. The influence of electron incidence depth and the range of electron motion. When the incident photoelectron energy increases, the energy loss rate gradually decreases, and the electron incident depth and the electron motion range increase. The simulation results can provide reference and basis for the design and preparation of the back-illuminated CMOS device substrate.
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