We design a type of broadband Silicon Nitride (SiN) power splitters with various split ratios using shortcuts to adiabaticity (STA) technique to ensure the compactness and performance of the device. The decoupled system states are employed in the double-waveguides system to guarantee the approximate adiabatic evolution and the desired split ratios are implemented by manipulating the boundary conditions. The devices show broadband response for a wide wavelength range from 1260 to 1360 nm and have excellent robustness against fabrication errors in our simulations.
An original design approach for inverted tapers based on effective mode area (EMA) control is proposed. It has been demonstrated that the inverted taper with constant loss as a function of position along the taper is most efficient. First, a general equation which can satisfy this constant loss condition is derived between EMA and the position within the taper. EMA can be controlled by adjusting the waveguide width. Introducing the relationship between EMA and waveguide width into this equation, an optimal profile for the inverted taper is obtained. The design approach is illustrated by applying it to an ideal SOI inverted taper. The conversion loss of the designed inverted taper can be reduced by 60% and 78% compared to parabolic and linear inverted tapers, respectively, when the taper length is 300 μm.
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