Recently, the development of semiconductor process for 14nm node and beyond is in progress. The mask-making
process demands higher resolution and CD accuracy to meet requirements. Current conventional ArF PSM has several
problems such as higher 3D effect and higher loading effect due to the thicker film. These problems cause the CD
performance degradation.
This study is about the manufacturing of advance ArF PSM, which has thinner phase shift layer and higher etch rate Cr
absorber film. The thickness of phase shift film is less than 60nm and the total etch-time for the Cr absorber film is
reduced more than 30%.
The mask CD performance of this new blank was evaluated in terms of CD uniformity, CD linearity, pattern resolution,
and loading effect and so on. Adapting to this new blank, we can achieve better CD performance by reducing the loading
effect. In addition, the chemical durability and ArF exposure durability were also improved.
In conclusion, the mask-making process margin was extended by using this new blank, and it is expected that we can
achieve the required specifications for 14nm node and beyond.
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