Ridge-waveguide (RW) lasers based on photonic crystal structure were fabricated and measured. We investigated the effect of residual layer thickness (corresponding to etching depth) and ridge width on electro-optical characteristics of RW lasers. For deep-etching RW lasers, although lateral beam quality factor M2 is better than that of shallow-etching RW lasers, the other characteristics such as output power are much less than that of shallow-etching RW lasers. The calculating results indicate that RW lasers with ridge width w ≥ 8 μm will operate in mixing mode. The experimentally results of various ridge width RW lasers show that RW laser with 7 μm ridge operated in single mode over the whole measurement range and RW laser with 8 μm ridge change from single-mode operation to mixing-mode operation with the increasing of driving current. The device with 7-μm-wide ridge and 3-mm-long cavity obtain 2 W single-transverse-mode optical power and 59% maximum power conversion efficiency. The lateral beam quality factors M2 values are less than 1.7 over the whole measuring range.
High power and high beam quality laser sources are required in numerous applications such as nonlinear frequency conversion, optical pumping of solid-state and fiber lasers, material processing and others. Tapered lasers can provide a high output power while keeping a high beam quality. However, the conventional tapered lasers suffer from a large vertical beam divergence. We have demonstrated 2-mm long tapered lasers with photonic crystal structures. A high beam quality and a narrow vertical divergence are achieved.
In this paper, we optimized the photonic crystal structure and fabricated a 4-mm long tapered laser to further increase the output power and the wall-plug efficiency. Compared with our precious wafer, the optimized structure has a lower doping level to reduce the internal loss. The period of the photonic crystal structure and the thickness of the upper cladding are also reduced. The device has a 1-mm long ridge-waveguide section and a 3-mm long tapered section. The taper angle is 4°. An output power of 7.3 W is achieved with a peak wall-plug efficiency of 46% in continuous-wave mode. The threshold current is around 500 mA and the slope efficiency is 0.93 W/A. In pulsed mode, the output power is 15.6 W and the maximum wall-plug efficiency is 48.1%. The far-field divergence with full width at half maximum is 6.3° for the lateral direction at 3 A. The vertical far-field beam divergence is around 11° at different injection levels. High beam qualities are demonstrated by beam quality factor M2 of 1.52 for the lateral direction and 1.54 for the vertical direction.
High efficiency 980 nm longitudinal photonic band crystal (PBC) edge emitting laser diodes are designed and fabricated. The calculated results show that eight periods of Al0.1Ga0.9As and Al0.25Ga0.75As layer pairs can reduce the vertical far field divergence to 10.6° full width at half maximum (FWHM). The broad area (BA) lasers show a very high internal quantum efficiency ηi of 98% and low internal loss αi of 1.92 cm-1. Ridge waveguide (RW) lasers with 3 mm cavity length and 5um strip width provide 430 mW stable single transverse mode output at 500 mA injection current with power conversion efficiency (PCE) of 47% under continuous wave (CW) mode. A maximum PCE of 50% is obtained at the 300 mA injection current. A very low vertical far field divergence of 9.4° is obtained at 100 mA injection. At 500 mA injection, the vertical far field divergence increases to 11°, the beam quality factors M2 values are 1.707 in vertical direction and 1.769 in lateral direction.
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