Anti-reflective sub-wavelength structures at a wavelength of 441.6 nm for phase masks of near-field lithography

Jinyu Li; Huoyao Chen; Stefanie Kroker; Thomas Käsebier; Zhengkun Liu; Keqiang Qiu; Ying Liu; Ernst-Bernhard Kley; Xiangdong Xu; Yilin Hong; Shaojun Fu

doi:10.1117/12.2246381

31 October 2016 Anti-reflective sub-wavelength structures at a wavelength of 441.6 nm for phase masks of near-field lithography

Jinyu Li, Huoyao Chen, Stefanie Kroker, Thomas Käsebier, Zhengkun Liu, Keqiang Qiu, Ying Liu, Ernst-Bernhard Kley, Xiangdong Xu, Yilin Hong, Shaojun Fu

Author Affiliations +

Proceedings Volume 10022, Holography, Diffractive Optics, and Applications VII; 100220T (2016) https://doi.org/10.1117/12.2246381
Event: SPIE/COS Photonics Asia, 2016, Beijing, China

Abstract

With the development of micro- & nanofabrication technology, micro- & nanostructures have been widely used in many fields, including spectroscopy, coding, sensor, subwavelength element, etc. With phase masks realized by a combination of electron beam lithography (EBL), near field lithography (NFH) has great potential to fabricate versatile nanostructures, because it combines the advantages of both lithographic methods. Currently, subwavelength structures attract much attention due to their various functions, such as antireflection, polarization beam splitter and filter. In this presentation, aiming at reducing the interface reflection of a fused silica mask of NFH at a wavelength of 441.6 nm and incidence angles of either 0° or 32°. First, we will compare the difference of antireflection property of one-dimensional (1D) and two-dimensional (2D) subwavelength structures with line density of 3600 lines/mm by simulation. Then, the optimized 1D and 2D subwavelength structures with 3600 lines/mm will be fabricated by using EBL-NFH method. Finally, the antireflection property of these 1D and 2D subwavelength structures will be characterized at the wavelength of 441.6 nm.

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Jinyu Li, Huoyao Chen, Stefanie Kroker, Thomas Käsebier, Zhengkun Liu, Keqiang Qiu, Ying Liu, Ernst-Bernhard Kley, Xiangdong Xu, Yilin Hong, and Shaojun Fu "Anti-reflective sub-wavelength structures at a wavelength of 441.6 nm for phase masks of near-field lithography", Proc. SPIE 10022, Holography, Diffractive Optics, and Applications VII, 100220T (31 October 2016); https://doi.org/10.1117/12.2246381

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KEYWORDS

Photomasks

Antireflective coatings

Lithography

Electron beam lithography

Interfaces

Reflectivity

Glasses

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