Paper
29 January 2020 Template development for sub15nm nanoimprint lithography
Ryota Seki, Akihiko Ando, Takeharu Motokawa, Machiko Suenaga, Noriko Iida nee Sakurai, Ryu Komatsu, Masato Naka, Rikiya Taniguchi, Syuichi Taniguchi, Kazuki Hagihara, Masato Saito, Hideaki Sakurai, Ryoji Yoshikawa, Eiji Yamanaka, Shingo Kanamitsu
Author Affiliations +
Abstract
Nanoimprint lithography (NIL) is promising technology for next generation lithography for the fabrication of semiconductor devices. The advantages of NIL are simpler process, less design rule restriction, which lead to lower cost-of-ownership, compared with conventional optical lithography. NIL is one to one lithography and contact transfer technique using template. Therefore template quality variations impact on wafer performance directly. To introduce NIL technology to high volume manufacturing (HVM) of semiconductor devices, improvement of template quality is very important. In the situation of pattern size shrinking, it is necessary to improve CD uniformity and defectivity to achieve the target of HVM. So that high accuracy QA (Quality Assurance) tools are required to qualify CD uniformity and defectivity which are key metrics on high-end template development. In this paper, we show the current status of template development for sub15nm NIL. For the template fabrication, double patterning technologies were applied to extend pattern resolution limit. Template replication was also implemented by template replication system Canon FPA1100-NR2. Finally we will show QA examples for high accuracy template by using key metrics such as CD uniformity, defectivity and Cross-sectional profile.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryota Seki, Akihiko Ando, Takeharu Motokawa, Machiko Suenaga, Noriko Iida nee Sakurai, Ryu Komatsu, Masato Naka, Rikiya Taniguchi, Syuichi Taniguchi, Kazuki Hagihara, Masato Saito, Hideaki Sakurai, Ryoji Yoshikawa, Eiji Yamanaka, and Shingo Kanamitsu "Template development for sub15nm nanoimprint lithography", Proc. SPIE 11178, Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology, 111780S (29 January 2020); https://doi.org/10.1117/12.2567043
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KEYWORDS
Nanoimprint lithography

Critical dimension metrology

Semiconducting wafers

Inspection

Scanning electron microscopy

Etching

Optical lithography

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