Enabling diamond nanoelectronics by transition metal-oxide-induced surface transfer doping

Dongchen Qi

doi:10.1117/12.2588701

5 March 2021 Enabling diamond nanoelectronics by transition metal-oxide-induced surface transfer doping

Dongchen Qi

Proceedings Volume 11687, Oxide-based Materials and Devices XII; 1168720 (2021) https://doi.org/10.1117/12.2588701
Event: SPIE OPTO, 2021, Online Only

Abstract

Despite being a bona-fide bulk insulator, diamond develops an intriguing two-dimensional (2D) p-type surface conductivity when its surface is terminated by hydrogen and exposed to appropriate surface adsorbate layer as a result of the surface transfer doping process. Consequently, the surface of diamond presents a versatile platform for exploiting some of the extraordinary physical and chemical properties of diamond, leading to applications such as chemical/biological sensing and the development of high-power and high-frequency field-effect transistors (FETs). In this talk, I will describe our recent work on the surface transfer doping of diamond by transition metal oxides (TMOs), which give rise to an underlying two-dimensional (2D) hole conducting layer on diamond that can be harnessed for building devices and the exploration of quantum transport properties.

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Citation Download Citation

Dongchen Qi "Enabling diamond nanoelectronics by transition metal-oxide-induced surface transfer doping", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 1168720 (5 March 2021); https://doi.org/10.1117/12.2588701

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KEYWORDS

Diamond

Doping

Oxides

Transition metals

Field effect transistors

Nanoelectronics

Temperature metrology

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