Presentation + Paper
12 October 2021 Characterization of mask CD mean-to-target for hotspot patterns by using SEM image contours
Author Affiliations +
Abstract
The mask CD mean-to-target (MTT) has been widely adopted as one of the key metrics for the mask quality control. As more aggressive optical proximity correction (OPC) is applied to push the resolution limit, traditional CDSEM measurement-based metrology is not sufficient to characterize mask CD MTT, especially for complicated 2D patterns. In this paper, we present the method of using SEM image contours for the characterization of mask CD MTT. The full flow includes contour extraction from mask SEM images, contour-to-contour alignment, contour averaging and edge placement error (EPE) measurement of mask image contour against the target. The OPC Verify engine is employed to give fast EPE check at closely packed sampling sites along the target. We apply this method to evaluate mask CD MTT for the hotspot patterns from two masks. The generated mask CD MTT distribution histograms and color maps demonstrate a good correlation with the wafer defect counts.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kan Zhou, Xin Guo, Yinsheng Yu, Hongwen Zhao, Wenzhan Zhou, Yu Zhang, Ao Chen, Wenming Wu, Qijian Wan, Huaiyang Dou, Chunshan Du, Liguo Zhang, and Germain Fenger "Characterization of mask CD mean-to-target for hotspot patterns by using SEM image contours", Proc. SPIE 11855, Photomask Technology 2021, 118550E (12 October 2021); https://doi.org/10.1117/12.2601674
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Scanning electron microscopy

Optical proximity correction

Feature extraction

Semiconducting wafers

Critical dimension metrology

Metrology

Back to Top