Presentation + Paper
28 April 2023 Feasibility of logic metal scaling with 0.55NA EUV single patterning
Author Affiliations +
Abstract
By adopting the new design of the optics within the scanner, high-NA (0.55NA) EUV lithography enables higher resolution, which will push the EUV single patterning down to pitch 16nm (k1=0.34, the same k1 value as pitch 28nm for 0.33NA EUV single patterning). Therefore, 0.55NA EUVL is projected to print the most critical features of 2nm node (and beyond) logic chips with less patterning steps than 0.33NA EUVL, and is highly expected by the industry. Besides, novel low-n low-k absorber attenuated phase shift masks (low-n attPSMs) are commercially available recently, which have shown substantial imaging, as well as patterning performance improvements both in simulations and experiments. Thus, in this paper, we evaluate the feasibility and limits of logic metal scaling with 0.55NA EUV single pattering using source mask optimization tool, both binary and low-n attPSMs are used to pattern an imec N3 (pitch 28nm, foundry N2 equivalent) random logic metal design and the linear scaled versions (down to pitch 18nm). The impact of design orientations (horizontal vs. vertical) and mask tones (dark field vs. bright field) on patterning fidelity and overall process window is evaluated.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dongbo Xu, Ling Ee Tan, Vicky Philipsen, Joerg Zimmermann, and Werner Gillijns "Feasibility of logic metal scaling with 0.55NA EUV single patterning", Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 124940M (28 April 2023); https://doi.org/10.1117/12.2657983
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KEYWORDS
Metals

Extreme ultraviolet lithography

Logic

SRAF

Photomasks

Printing

Extreme ultraviolet

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