Frequency doubling and phase error tolerance exploration for chrome-less phase shift mask

Liang Li; Miao Jiang; Di Liang; Binbin Yan; Mingqi Gao; Dajun Wu; Andy Lan; Jiangliu Shi

doi:10.1117/12.2657844

28 April 2023 Frequency doubling and phase error tolerance exploration for chrome-less phase shift mask

Liang Li, Miao Jiang, Di Liang, Binbin Yan, Mingqi Gao, Dajun Wu, Andy Lan, Jiangliu Shi

Proceedings Volume 12494, Optical and EUV Nanolithography XXXVI; 1249413 (2023) https://doi.org/10.1117/12.2657844
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Conference Poster

Abstract

As increasing complexity of1 devices and scaling have continued to push the lithography to low k1 limit, lithographic scientists have been developing various resolution enhancement techniques (RET) to extend 193nm immersion lithography. Chrome-less phase shift mask (PSM) is one of the RET techniques which can produce frequency doubling to half the pitch. The shifter is changed from MoSi to quartz for chrome-less PSM. And the shifter in quartz that is challenging to control at mask etch process. This will cause phase error, lead to image shift and CD asymmetry impacts wafer CD uniformity (CDU) due to intensity imbalance. In this paper, based on aerial image simulations, the conditions to generate frequency doubling have been studied, the resolution limit of the frequency doubling has been investigated. The phase error tolerance of frequency doubling for accepted wafer CDU referring ITRS road map plus budget breakdown to reticle CDU contribution has been studied. The phase error tolerance for smaller pitch is predicted with polynomial fitting extend too.

Citation Download Citation

Liang Li, Miao Jiang, Di Liang, Binbin Yan, Mingqi Gao, Dajun Wu, Andy Lan, and Jiangliu Shi "Frequency doubling and phase error tolerance exploration for chrome-less phase shift mask", Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 1249413 (28 April 2023); https://doi.org/10.1117/12.2657844

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