Paper
10 April 2000 Micromechanical silicon precision scale
Aarne S. Oja, Teuvo Sillanpaa, H. Seppae, Jyrki Kiihamaki, P. Seppala, Jani Karttunen, Kari Riski
Author Affiliations +
Proceedings Volume 4019, Design, Test, Integration, and Packaging of MEMS/MOEMS; (2000) https://doi.org/10.1117/12.382318
Event: Symposium on Design, Test, Integration, and Packaging of MEMS/MOEMS, 2000, Paris, France
Abstract
A micro machined capacitive silicon scale has been designed and fabricated. It is intended for weighing masses on the order of 1 g at the resolution of about 1 ppm and below. The device consists of a micro machined SOI chip which is anodically bonded to a glass chip. The flexible electrode is formed in the SOI device layer. The other electrode is metallized on the glass and is divided into three sections. The sections are used for detecting tilting of the top electrode due to a possible off-centering of the mass load. The measuring circuit implements electrostatic force feedback and keeps the top electrode at a constant horizontal position irrespective of its mass loading. First measurements have demonstrated the stability allowing measurement of 1 g masses at an accuracy of 2...3 ppm.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aarne S. Oja, Teuvo Sillanpaa, H. Seppae, Jyrki Kiihamaki, P. Seppala, Jani Karttunen, and Kari Riski "Micromechanical silicon precision scale", Proc. SPIE 4019, Design, Test, Integration, and Packaging of MEMS/MOEMS, (10 April 2000); https://doi.org/10.1117/12.382318
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Electrodes

Capacitance

Silicon

Etching

Glasses

Semiconducting wafers

Bridges

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