New photomask pattern generation method based on i-line stepper

Suigen Kyoh; Shun-Ichiro Tanaka; Soichi Inoue; Iwao Higashikawa; Ichiro Mori; Katsuya Okumura; Nobuyuki Irie; Koji Muramatsu; Yuuki Ishii; Nobutaka Magome; Toshikazu Umatate

doi:10.1117/12.392096

19 July 2000 New photomask pattern generation method based on i-line stepper

Suigen Kyoh, Shun-Ichiro Tanaka, Soichi Inoue, Iwao Higashikawa, Ichiro Mori, Katsuya Okumura, Nobuyuki Irie, Koji Muramatsu, Yuuki Ishii, Nobutaka Magome, Toshikazu Umatate

Author Affiliations +

Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392096
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan

Abstract

New pattern generation system, Photomask Repeater, based on i-line stepper has been developed. This system can transfer device patterns from master masks onto a photomask plate with 22mm field size. To print a chip larger than the 22mm field, stitching technology has been developed. Critical dimension error in the region where fields are stitched is the key issue of this technology. Quantification of critical dimension deviation induced by field misplacement was carried out by calculation. Introducing exposure dose gradation, it was reduced less than 1.5nm. From measurements of a real exposed mask this technique proved to be able to stitch fields seamlessly. Major two specifications, pattern placement accuracy and critical dimension uniformity, were evaluated. Both specifications required for 150nm photomasks were fully satisfied. Availability of the photomask repeater to memory device and system on chip is discussed.

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Suigen Kyoh, Shun-Ichiro Tanaka, Soichi Inoue, Iwao Higashikawa, Ichiro Mori, Katsuya Okumura, Nobuyuki Irie, Koji Muramatsu, Yuuki Ishii, Nobutaka Magome, and Toshikazu Umatate "New photomask pattern generation method based on i-line stepper", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392096

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KEYWORDS

Photomasks

Optical proximity correction

Semiconducting wafers

Critical dimension metrology

System on a chip

Lithography

Kinematics

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