Si/Si1-xGex/Si low-loss waveguides fabricated using selective epitaxial growth

Adrian P. Vonsovici; Souren P. Pogossian; Lili Vescan

doi:10.1117/12.426925

18 May 2001 Si/Si_1-xGe_x/Si low-loss waveguides fabricated using selective epitaxial growth

Adrian P. Vonsovici, Souren P. Pogossian, Lili Vescan

Proceedings Volume 4293, Silicon-based and Hybrid Optoelectronics III; (2001) https://doi.org/10.1117/12.426925
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

The realisation of two-dimensional Si/Si_1-xGe_x/Si strained layer low-loss waveguides (1.7 dB/cm at 1.3micrometers ) is reported. The waveguide structure is grown using selective epitaxy. This fabrication method insures loosened cut-off and critical thickness conditions as demonstrated previously by the room-tem-perature operation of vertical emitting SiGe/Si LED. The main difference from other fabrication methods is the local deposition of the SiGe in a finite stripe region while in the conventional fabrication of rib waveguides the SiGe layer is deposited on an entire wafer and then patterned by reactive ion etching. The relative high amount of Ge (19%) incorpo-rated in selectively grown waveguides, and reduced thickness (0.6micrometers ) of Si cap layer are improvements from the previous reported SiGe/Si waveguides where thick Si cap layers (few microns) and reduced Ge concentrations (<10%) are necessary in order to obtain waveguiding.

Citation Download Citation

Adrian P. Vonsovici, Souren P. Pogossian, and Lili Vescan "Si/Si_1-xGe_x/Si low-loss waveguides fabricated using selective epitaxial growth", Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); https://doi.org/10.1117/12.426925

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