Paper
26 June 2003 Novel in-situ focus monitor technology in attenuated PSM under actual illumination condition
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Abstract
A focus monitor technology for attenuated PSM under annular illumination has been developed as an in-line quality control. The focus monitor pattern on a reticle employs a pair of grouped lozenge-shaped opening patterns in attenuated phase shifting region. Since the phase shifting angles of the light passing through the first and second opening patterns are 90 degrees and 180 degrees, respectively, the best focus position for the first pattern shifts to that for the second pattern. The subtraction of the length of the patterns is a linear function of the actual focal position printed on the wafer. Therefore, the effective focal position can be extracted by measuring the subtraction of the measured length. A high resolution of 10-nm defocus could be achieved by this technique.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyoko Izuha, Masafumi Asano, Tadahito Fujisawa, and Soichi Inoue "Novel in-situ focus monitor technology in attenuated PSM under actual illumination condition", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485364
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Cited by 8 scholarly publications.
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KEYWORDS
Photomasks

Semiconducting wafers

Transmittance

Phase shifting

Critical dimension metrology

Phase shifts

Reticles

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