70nm DRAM intra-field CDU improvement by dose modulation on mask transmittance

Tomas Chin; Wen Bin Wu; Chiang Lin Shih; Pei Cheng Fan; Guy Ben Zvi

doi:10.1117/12.801417

17 October 2008 70nm DRAM intra-field CDU improvement by dose modulation on mask transmittance

Tomas Chin, Wen Bin Wu, Chiang Lin Shih, Pei Cheng Fan, Guy Ben Zvi

Proceedings Volume 7122, Photomask Technology 2008; 712238 (2008) https://doi.org/10.1117/12.801417
Event: SPIE Photomask Technology, 2008, Monterey, California, United States

Abstract

DRAM intra-field CD uniformity (CDU) demand becomes more crucial with pattern size shrink and wafer die or memory size expanding. Intra-field CDU error mainly comes from mask CD error, scanner exposure and wafer process. This study makes use of a method to extract systematic CDU error from multi-field CDU results. Based on the information of the systematic CDU error, localized mask transmittance modulation is implemented to compensate the intra-field systematic CDU error on wafer. A focused ultrafast laser beam forms shading elements in mask quartz substrate. Mask transmittance modulation is controlled by the shading element density variation. This study will demonstrate the intra-field CDU improvement result, CD modulation calibration validity, CD proximity variation result and mask inspection result etc.

Citation Download Citation

Tomas Chin, Wen Bin Wu, Chiang Lin Shih, Pei Cheng Fan, and Guy Ben Zvi "70nm DRAM intra-field CDU improvement by dose modulation on mask transmittance", Proc. SPIE 7122, Photomask Technology 2008, 712238 (17 October 2008); https://doi.org/10.1117/12.801417

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