Application of rigorous electromagnetic simulation to SLM-based maskless lithography for 65-nm node

Ebo H. Croffie; Nick Eib; Neal P. Callan; Nabila Baba-Ali; Azat Latypov; Jason Hintersteiner; Torbjorn Sandstrom; Arno Bleeker; Kevin D. Cummings

doi:10.1117/12.518747

17 December 2003 Application of rigorous electromagnetic simulation to SLM-based maskless lithography for 65-nm node

Ebo H. Croffie, Nick Eib, Neal P. Callan, Nabila Baba-Ali, Azat Latypov, Jason Hintersteiner, Torbjorn Sandstrom, Arno Bleeker, Kevin D. Cummings

Author Affiliations +

Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.518747
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

Maskless lithography imaging based on SLM tilt mirror architecture requires illumination of light on a non-planar reflective topography. While the actual mirror dimensions can be much larger than the wavelength of light, the spacing between mirrors and the tilt range of interest are on the order of the wavelength. Thus, rigorous electromagnetic solution is required to capture light scattering effects due to the non-planar topography. We combine high NA imaging simulation with rigorous simulation of light scattering from the mirrors to study its effects on 65nm maskless lithography imaging. We vary mirror size, mirror tilt arrangemetn, feature type and illumination settings and compare the rigorous light scattering imagign resutls wtih standard imaging simulations using Kirchoff approximation. While electromagnetic scattering effects are present in the form of lateral standing waves and edge streamers in reflected light near-field intensity, they have negligible effects on SLM imaging for mirror sizes more than 1μm². The effects of mirror tilt arrangement on diffraction orders aer used to study the through-focus behavior of alternating rows arrangement used in the SIGMA maskwriters as well as alternative arrangements. The good imaging properties of the alternating rows arrangement used in the SIGMA maskwriters as well as alternative arrangements. The good imaging properties of the alternating rows arrangement are confirmed and a multipass overlay scheme giving further image fidelity improvements is suggested.

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Ebo H. Croffie, Nick Eib, Neal P. Callan, Nabila Baba-Ali, Azat Latypov, Jason Hintersteiner, Torbjorn Sandstrom, Arno Bleeker, and Kevin D. Cummings "Application of rigorous electromagnetic simulation to SLM-based maskless lithography for 65-nm node", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518747

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