The effect of polarized 193nm irradiation on photomask haze formation

Y. D. Kim; H. B. Kang; Yuan Zhang; Chuong Tran; Nigel Farrar; Jennifer Qin; Barry Rockwell; H. J. Cho; Rand Cottle; David Chan; Pat Martin; S. S. Choi; Chris Progler

doi:10.1117/12.598913

12 May 2005 The effect of polarized 193nm irradiation on photomask haze formation

Y. D. Kim, H. B. Kang, Yuan Zhang, Chuong Tran, Nigel Farrar, Jennifer Qin, Barry Rockwell, H. J. Cho, Rand Cottle, David Chan, Pat Martin, S. S. Choi, Chris Progler

Author Affiliations +

Proceedings Volume 5754, Optical Microlithography XVIII; (2005) https://doi.org/10.1117/12.598913
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Various sources contribute to mask haze formation including: chemical residuals from mask cleaning, out-gassing from pellicle glue/materials, and contaminants from the scanner ambient. This joint work examines cleaning techniques for haze minimization and whether or not there is haze formation after continuous laser irradiation. Masks with various designs and different cleaning techniques were tested in an ideal environment, isolated from out-gassing or other possible contaminants from the fab environment. Masks with and without patterns were subjected to 40kJ, accumulated dose, of laser radiation to simulate a wafer fab environment. Ion Chromatography (IC) and other surface analytical techniques were used to check the surface condition of masks before and after laser exposure. No haze was found on masks through transmission and IC measurements, when the test chamber was N₂ purged. This may suggest that new cleaning techniques have helped reduce chemical residuals on masks. It is less likely for haze to grow when masks are clean to an ionic level and when laser exposure occurs in an uncontaminated, purged environment.

Citation Download Citation

Y. D. Kim, H. B. Kang, Yuan Zhang, Chuong Tran, Nigel Farrar, Jennifer Qin, Barry Rockwell, H. J. Cho, Rand Cottle, David Chan, Pat Martin, S. S. Choi, and Chris Progler "The effect of polarized 193nm irradiation on photomask haze formation", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.598913

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available