Dr. Christopher J. Progler Profile

Dr. Christopher J. Progler

Chief Technology Officer at Photronics Inc

SPIE Involvement:

Author

Publications (73)

Proceedings Article | 10 April 2024 Presentation

Unique needs of multi-beam mask writing as applied in merchant multi-node applications

Christopher Progler

Proceedings Volume PC12956, PC1295607 (2024) https://doi.org/10.1117/12.3012272

KEYWORDS: Metrology, Industrial applications, Virtual reality, Systems modeling, Photomasks, Modeling, Mask making, Manufacturing, Lithography, Industry

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Proceedings Article | 21 November 2023 Open Access

Use of advanced data modeling to introduce and extend mask tools serving mainstream application

Mohamed Ramadan, Christopher Progler, Michael Green, Henry Kamberian, Jinju Beineke

Proceedings Volume 12751, 127510I (2023) https://doi.org/10.1117/12.2688168

KEYWORDS: Data modeling, Photomasks, Biomedical applications, Internet of things, Industrial applications, Product engineering, Optical lithography, Medical devices, Manufacturing, Laser applications

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Proceedings Article | 21 November 2023 Presentation + Paper

EUV mask patterning process to enable opaque SRAFs for bright field EUV mask imaging

Michael Green, Scott Halle, Mohamed Ramadan, Romain Lallement, Henry Kamberian, Martin Burkhardt, Jinju Beineke, Jed Rankin, Chris Progler, Steven McDermott

Proceedings Volume 12751, 127510M (2023) https://doi.org/10.1117/12.2689665

KEYWORDS: SRAF, Extreme ultraviolet, Optical lithography, Resolution enhancement technologies, Opacity, Extreme ultraviolet lithography, Optical proximity correction, Line edge roughness, Semiconducting wafers, Printing

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As extreme ultraviolet lithography (EUVL) technology progresses to support more advanced nodes, mask designs are becoming more complex and difficult for mask makers to produce with the required fidelity. Resolution enhancement techniques (RETs) including mask optical proximity correction (OPC) models and the addition of sub-resolution assist features (SRAFs) are now critical technology enablers. Early adopters of EUVL benefited from the resolution improvement provided by the shorter wavelength. To extend the benefits of EUV to smaller technologies and broader applications, SRAFs are valuable tools to maximize the process window for a variety of critical layers which require both bright and dark field imaging. Regardless of mask tone, because of the short wavelength of EUV radiation, very small SRAFs are required, thus patterning SRAFs for EUVL poses significant mask process challenges. E beam exposure and resist characteristics are key factors for important patterning attributes including minimum resolvable size, line edge roughness (LER), corner rounding (CR), and line end shortening (LES). Patterning dark SRAFs for bright field masks involves an additional challenge of overcoming mechanical forces on these small structures that can cause feature toppling or collapse. In this study, we demonstrate a mask process capable of patterning dark SRAFs on mask at line widths below 25nm (4X). We will discuss patterning solutions including innovations in both the physical mask manufacturing processes as well as mask data preparation techniques, such as mask process correction (MPC). We will utilize advanced characterization techniques to evaluate SRAF pattern fidelity on the mask and its predicted impact on wafer printing performance. A process capable of resolving sufficiently small SRAFs enables an on-wafer analysis to validate whether the predicted lithographic benefits can be demonstrated. Finally, we will review the outlook of continued shrinking mask resolution requirements from both a design value and process implementation perspective. The coming challenges for EUV mask makers include supporting not only ever increasing design complexity, but also the introduction of new mask materials, including phase shift masks (PSMs) as part of the overall RET solution.

Proceedings Article | 1 December 2022 Poster + Paper

The feasibility of alternative blank substrate materials for large-scale FPD mask process and manufacturing

Young Ham, Tooru Suzuki, Akira Uchida, Kei Kurebayashi, Freeman Sung, Robert Bendernagel, Myung Yong Kim, Chris Progler

Proceedings Volume 12293, 122930S (2022) https://doi.org/10.1117/12.2644329

KEYWORDS: Photomasks, Lithography, Manufacturing, Glasses, Transmittance, Quartz, Inspection, Fused quartz, Optical lithography, Optics manufacturing

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Photomask technology has contributed to the capability and productivity of integrated circuit (IC) and flat panel display (FPD) manufacturing with the implementation of masks that have improved process capability, margins and yield including but not limited to advanced binary or multi-tone masks and phase shifting masks. These masks are mainly composed of various chrome and phase shift materials deposited onto very high quality and stable substrates made out of fine grade fused silica materials. However, for large-scale masks like those used in manufacturing masks for FPD lithography, the cost and availability of such high quality substrates can be a prohibitive factor for cost effective production. Moreover, it is possible for some layers of these non-IC, large format applications, such very high performance fused silica substrates may not be necessary to meet the lithographic imaging requirements. Therefore, it seems desirable to understand the properties of alternate substrate materials to see if they might be suitable for improving the cost and availability factors in the large format applications. In this paper, we evaluate the optical and physical properties of various non-standard materials including thermal expansion, transmission, flatness and defectivity to better understand how these parameters might impact the imaging of certain layers. We compare major parameters in the lithography process such as CD, registration, displacement, defect printability and chemical durability related to process performance and variation. Moreover, we characterize defects and their impact on process using a general inspection tool and AIMS to assess the importance of certain defect modes especially of the embedded or inclusion type. Bubbles that occur in glass manufacturing process are analyzed and we attempt to classify the patterning impact using simulation and matching with AIMS. Finally, we draw conclusions on the suitability of these alternate materials to deliver a much lower cost mask solution for use in certain large format imaging applications by considering specifically the flat panel process and performance predictions.

Proceedings Article | 13 June 2022 Presentation

Photomasks unmasked: confessions of a recovering lithographer

Christopher Progler

Proceedings Volume PC12051, PC1205102 (2022) https://doi.org/10.1117/12.2615103

KEYWORDS: Photomasks, Semiconducting wafers, Printing, Manufacturing, Mask making, Resolution enhancement technologies, Lithography, Image processing, Extreme ultraviolet

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Proceedings Article | 23 August 2021 Paper

Model based mask process correction for EUV Mask

Mohamed Ramadan, Brian Dillon, Michael Green, Chris Progler, Young Ham, Ahmad Syukri

Proceedings Volume 11908, 1190804 (2021) https://doi.org/10.1117/12.2601855

KEYWORDS: Process modeling, Photomasks, Extreme ultraviolet, Model-based design, Extreme ultraviolet lithography, Deep ultraviolet, Photoresist processing, Modeling, Logic, Lithography

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Proceedings Article | 20 October 2020 Presentation + Paper

Patterning solutions for NTD contact hole levels in advanced DRAM nodes

Michael Green, Tsu-Wen Huang, Mohamed Ramadan, Hung-Chang Szu, Yeu Dong Gau, Chih-Ying Tsai, Young Ham, Chun-Cheng Liao, Lucien Bouchard, Eric Huang, Wei-Cheng Shiu, Chris Progler

Proceedings Volume 11518, 115180N (2020) https://doi.org/10.1117/12.2574713

KEYWORDS: Photomasks, Optical lithography, Semiconducting wafers, Lithography, Optical proximity correction, Immersion lithography, 193nm lithography, Critical dimension metrology

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Proceedings Article | 23 March 2020 Presentation + Paper

EUVL mask process development and verification using advanced modeling and characterization techniques

Michael Green, Romain Lallement, Mohamed Ramadan, Derren Dunn, Henry Kamberian, Stuart Sieg, Young Ham, Chris Progler

Proceedings Volume 11323, 113230Q (2020) https://doi.org/10.1117/12.2560545

KEYWORDS: Photomasks, Semiconducting wafers, Extreme ultraviolet lithography, Scanning electron microscopy, Line edge roughness, Stochastic processes, Optical proximity correction, SRAF, Metals, Lithography

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Mask technology is key to enabling the progression of advanced IC technology nodes into the realm beyond 7nm node logic. In particular, extreme ultraviolet lithography (EUVL) relies heavily on the mask in order to achieve adequate process window (PW) and final yields. In the EUVL environment, mask process development and verification becomes increasingly more difficult and costly. The mask manufacture costs are driven by multiple factors including significantly more expensive mask blanks and increased ebeam write times. Wafer verification of mask process improvements is very difficult with the relatively low number of early adopters of EUVL and high cost associated with processing non-product wafers with that technology. It is therefore useful for mask manufacturers and wafer lithographers to collaborate to develop low cost mask process screening techniques as a precursor to committing valuable EUV exposure time for final verification. Previously, we demonstrated that by utilizing a toolkit of mask and wafer analytical techniques known as advanced mask characterization and optimization (AMCO) [2], we were able to predict wafer defectivity on 1D and 2D metal structures and optimize a mask process to enable 30nm pitch interconnect in a single exposure step using EUVL [1]. In this study, we use similar methodology to develop a mask process for beyond 7nm node logic contact and via layers. These structures pose a different set of challenges than the metal layer. Contact hole area loss, corner rounding (CR), and mask process-induced x-y error on asymmetric holes must be optimized to deliver the required capability. Additionally, sub-resolution assist features (SRAFs) become relevant at this node. Resolving these on the mask is critical. Here, we describe the development of a mask process to overcome these challenges. We use advanced modeling techniques including AMCO to characterize the process improvements and predict wafer performance. Mask process improvements that are characterized include both physical mask process components as well as write data optimization techniques, i.e. mask process correction (MPC).

Proceedings Article | 26 September 2019 Paper

Practical lithography hotspot identification using mask process model

Pai Chi Chen, Chain Ting Huang, Shang Feng Weng, Yung Feng Cheng, Young Ham, Colbert Lu, Michael Green, Mohamed Ramadan, Hong Jen Lee, Chris Progler

Proceedings Volume 11148, 111481H (2019) https://doi.org/10.1117/12.2537935

KEYWORDS: Lithography, Photomasks, Process modeling, Optical proximity correction, Semiconducting wafers, Machine learning, Resolution enhancement technologies, Source mask optimization, Critical dimension metrology, Computer simulations

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Proceedings Article | 26 March 2019 Presentation + Paper

EUV mask challenges and requirements for ultimate single exposure interconnects

Chris Progler, Michael Green, Ravi Bonam, Henry Kamberian, Mohamed Ramadan, Derren Dunn, Young Ham, Yohan Choi, Luciana Meli, Nelson Felix, Daniel Corliss, Bryan Kasprowicz

Proceedings Volume 10957, 109570L (2019) https://doi.org/10.1117/12.2515071

KEYWORDS: Photomasks, Semiconducting wafers, Image processing, Extreme ultraviolet lithography, Electron beam lithography, Stochastic processes, Inspection, Line edge roughness, Extreme ultraviolet, Optical proximity correction

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Proceedings Article | 3 October 2018 Paper

Hotspot analysis and empirical correction through mask and wafer technology harmonization

Yohan Choi, William Chou, Jeffrey Cheng, C. H. Twu, Adder Lee, Chih Hsuan Chao, Hsin Fu Chou, Sweet Chen, James Cheng, Colbert Lu, Josh Tzeng, Jackie Cheng, Hong Jen Lee, Michael Green, Mohamed Ramadan, Young Ham, Chris Progler

Proceedings Volume 10810, 108101K (2018) https://doi.org/10.1117/12.2501427

KEYWORDS: Optical proximity correction, Photomasks, Lithography

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Proceedings Article | 16 October 2017 Presentation + Paper

EUV mask manufacturing readiness in the merchant mask industry

Michael Green, Yohan Choi, Young Ham, Henry Kamberian, Chris Progler, Shih-En Tseng, Tsann-Bim Chiou, Junji Miyazaki, Ad Lammers, Alek Chen

Proceedings Volume 10450, 1045005 (2017) https://doi.org/10.1117/12.2281132

KEYWORDS: Photomasks, SRAF, Extreme ultraviolet, Manufacturing, Optical proximity correction, Extreme ultraviolet lithography, Metals, Inspection, Scanning electron microscopy, Metrology

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As nodes progress into the 7nm and below regime, extreme ultraviolet lithography (EUVL) becomes critical for all industry participants interested in remaining at the leading edge. One key cost driver for EUV in the supply chain is the reflective EUV mask. As of today, the relatively few end users of EUV consist primarily of integrated device manufactures (IDMs) and foundries that have internal (captive) mask manufacturing capability. At the same time, strong and early participation in EUV by the merchant mask industry should bring value to these chip makers, aiding the wide-scale adoption of EUV in the future. For this, merchants need access to high quality, representative test vehicles to develop and validate their own processes. This business circumstance provides the motivation for merchants to form Joint Development Partnerships (JDPs) with IDMs, foundries, Original Equipment Manufacturers (OEMs) and other members of the EUV supplier ecosystem that leverage complementary strengths. In this paper, we will show how, through a collaborative supplier JDP model between a merchant and OEM, a novel, test chip driven strategy is applied to guide and validate mask level process development. We demonstrate how an EUV test vehicle (TV) is generated for mask process characterization in advance of receiving chip maker-specific designs. We utilize the TV to carry out mask process “stress testing” to define process boundary conditions which can be used to create Mask Rule Check (MRC) rules as well as serve as baseline conditions for future process improvement. We utilize Advanced Mask Characterization (AMC) techniques to understand process capability on designs of varying complexity that include EUV OPC models with and without sub-resolution assist features (SRAFs). Through these collaborations, we demonstrate ways to develop EUV processes and reduce implementation risks for eventual mass production. By reducing these risks, we hope to expand access to EUV mask capability for the broadest community possible as the technology is implemented first within and then beyond the initial early adopters.

Proceedings Article | 23 October 2015 Paper

Mask process matching using a model based data preparation solution

Brian Dillon, Mohamed Saib, Thiago Figueiro, Paolo Petroni, Chris Progler, Patrick Schiavone

Proceedings Volume 9635, 96350T (2015) https://doi.org/10.1117/12.2199273

KEYWORDS: Photomasks, Data modeling, Calibration, Process modeling, Metrology, Critical dimension metrology, Mask making, Data processing, Photoresist processing, Optical proximity correction

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Process matching is the ability to precisely reproduce the signature of a given fabrication process while using a different one. A process signature is typically described as systematic CD variation driven by feature geometry as a function of feature size, local density or distance to neighboring structures. The interest of performing process matching is usually to address differences in the mask fabrication process without altering the signature of the mask, which is already validated by OPC models and already used in production. The need for such process matching typically arises from the expansion of the production capacity within the same or different mask fabrication facilities, from the introduction of new, perhaps more advanced, equipment to deliver same process of record masks and/or from the re-alignment of processes which have altered over time. For state-of-the-art logic and memory mask processes, such matching requirements can be well below 2nm and are expected to reduce below 1nm in near future. In this paper, a data preparation solution for process matching is presented and discussed. Instead of adapting the physical process itself, a calibrated model is used to modify the data to be exposed by the source process in order to induce the results to match the one obtained while running the target process. This strategy consists in using the differences among measurements from the source and target processes, in the calibration of a single differential model. In this approach, no information other than the metrology results is required from either process. Experimental results were obtained by matching two different processes at Photronics. The standard deviation between both processes was of 2.4nm. After applying the process matching technique, the average absolute difference between the processes was reduced to 1.0nm with a standard deviation of 1.3nm. The methods used to achieve the result will be described along with implementation considerations, to help assess viability for model driven data solutions to play a role in future, critical mask matching efforts.

SPIE Journal Paper | 25 June 2013 Open Access

Special Section Guest Editorial: Photomasks for EUV Lithography

Christopher Progler, Frank Abboud

JM3, Vol. 12, Issue 02, 021001, (June 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.2.021001

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Process modeling, Instrument modeling, Reflectivity, Defect inspection, Inspection, Mask making, Printing

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The equipment and process development model for extreme ultraviolet (EUV) masks spans international consortia, closely held multiparty alliances, individual user efforts, materials/equipment programs and ad hoc collaborations. Mask integration efforts are also spread widely from captive mask programs driving toward early and specific EUV use cases to more general-purpose efforts typical of broad application foundry or merchant business models. Even specifications for EUV masks remain a dynamically moving target as the reflective and film properties of the mask coupled with incoming illumination obliquity represent a dramatic departure from previous mask technology. Finally, due to the highly sensitive nature of mask technology as the entry point of a chip design into the fab, many teams are understandably reluctant to publish works due to competitive concerns. For these reasons, it seems particularly valuable to aggregate and highlight important work under way to address key issues in EUV mask development. We are therefore grateful to the expert authors who have provided contributions to this special edition in the following critical areas: •Mask defects and inspection often viewed as the most challenging integration module for delivering production-worthy EUV masks; •Mask blanks representing the critical starting point for high-yielding mask fabrication; •Interplay between mask quality and mask printing, which has particular importance for the new emerging patterning system; •Etching of the mask posing special challenges thanks to the unique substrate characteristics. We hope you will be encouraged by the progress and understanding demonstrated in these works for critical parts of the mask infrastructure. Despite the unique challenge of delivering a new mask technology to the industry, it is clear substantial progress is being made toward the end goal. Of course, readers should draw their own conclusions, and, toward that, we urge EUV ecosystem participants to continue adding to the discussion by publishing new works that support a vigorous EUV mask co-learning and technology dialogue.

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SPIE Journal Paper | 1 July 2011

Cost-driven mask strategies considering parametric yield, defectivity, and production volume

Kwangok Jeong, Andrew Kahng, Christopher Progler

JM3, Vol. 10, Issue 03, 033021, (July 2011) https://doi.org/10.1117/12.10.1117/1.3633246

KEYWORDS: Photomasks, Reticles, Semiconducting wafers, Critical dimension metrology, Extreme ultraviolet lithography, Manufacturing, Lithography, Inspection, Extreme ultraviolet, Data modeling

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Proceedings Article | 3 April 2010 Paper

Exploring complex 2D layouts for 22nm node using double patterning/double etch approach for trench levels

Scott Jessen, Steven Prins, James Blatchford, Brian Dillon, Christopher Progler

Proceedings Volume 7641, 76410A (2010) https://doi.org/10.1117/12.848350

KEYWORDS: Metals, Double patterning technology, Photomasks, Etching, Optical lithography, Semiconducting wafers, Lithography, Scanning electron microscopy, Optical proximity correction, Fiber optic illuminators

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Proceedings Article | 11 December 2009 Paper

Revisiting adoption of high transmission PSM: pros, cons and path forward

Z. Mark Ma, Steve McDonald, Chris Progler

Proceedings Volume 7520, 752017 (2009) https://doi.org/10.1117/12.838246

KEYWORDS: Photomasks, Lithography, SRAF, Quartz, Optical proximity correction, Etching, Critical dimension metrology, Manufacturing, Phase shifts, Lithographic illumination

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Proceedings Article | 16 March 2009 Paper

Impact of lithography variability on analog circuit behavior

Christopher Progler, Bhaskar Banerjee, M. Haniff, T. Mahzabeen

Proceedings Volume 7275, 72750G (2009) https://doi.org/10.1117/12.816509

KEYWORDS: Lithography, Analog electronics, Transistors, Photomasks, Critical dimension metrology, Oscillators, Mirrors, Error analysis, Manufacturing, Complex systems

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Proceedings Article | 30 October 2007 Paper

Polarization-induced astigmatism caused by topographic masks

Johannes Ruoff, Jens Timo Neumann, Emil Schmitt-Weaver, Eelco van Setten, Nicolas le Masson, Chris Progler, Bernd Geh

Proceedings Volume 6730, 67301T (2007) https://doi.org/10.1117/12.747039

KEYWORDS: Diffraction, Polarization, Photomasks, Monochromatic aberrations, Binary data, Birefringence, Electromagnetism, Chromium, Commercial off the shelf technology, Reticles

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Proceedings Article | 26 March 2007 Paper

Process margin improvement using custom transmission EAPSM reticles

J. Buntin, S. Agarwal, B. Rolfson, R. Housley, B. Baggenstoss, E. Byers, C. Progler

Proceedings Volume 6520, 65202D (2007) https://doi.org/10.1117/12.712368

KEYWORDS: Reticles, Resolution enhancement technologies, Image transmission, Nano opto mechanical systems, Semiconducting wafers, Image processing, 193nm lithography, Etching, Lithography, Databases

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Proceedings Article | 21 March 2006 Paper

High transmission mask technology for 45nm node imaging

Will Conley, Nicoló Morgana, Bryan Kasprowicz, Mike Cangemi, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Wei Wu, Jonathan Cobb, Young-Mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 6154, 615411 (2006) https://doi.org/10.1117/12.659353

KEYWORDS: Photomasks, Polarization, Etching, Plasma etching, Manufacturing, Plasma, Semiconducting wafers, Chromium, Lithography, Chlorine

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Proceedings Article | 20 March 2006 Paper

The optics of photomasks: from shadowy past to scattered future

Christopher Progler

Proceedings Volume 6154, 615402 (2006) https://doi.org/10.1117/12.663291

KEYWORDS: Photomasks, Resolution enhancement technologies, Scattering, Lithography, Optical proximity correction, Semiconducting wafers, Diffractive optical elements, Lithographic illumination, Phase shifts, Optical components

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Proceedings Article | 15 March 2006 Paper

Optical properties and process impacts of high transmission EAPSM

Young Mog Ham, Nicolo Morgana, Pierre Sixt, Mike Cangemi, Bryan Kasprowicz, Chris Progler, Pat Martin

Proceedings Volume 6154, 615413 (2006) https://doi.org/10.1117/12.659238

KEYWORDS: Photomasks, Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Lithography, Chromium, Polarization, Image processing, SRAF, Resolution enhancement technologies

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Proceedings Article | 15 March 2006 Paper

EMF simulation with DDM to enable EAPSM masks in 45-nm manufacturing

Patrick Martin, C. Progler, Michael Cangemi, Kostas Adam, George Bailey, Pat LaCour

Proceedings Volume 6154, 61541G (2006) https://doi.org/10.1117/12.659487

KEYWORDS: SRAF, Polarization, Photomasks, Data modeling, Optical proximity correction, Refractive index, Manufacturing, System on a chip, Critical dimension metrology, Resolution enhancement technologies

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Proceedings Article | 15 March 2006 Paper

High transmission mask technology for 45nm node imaging

Will Conley, Nicoló Morgana, Bryan Kasprowicz, Mike Cangemi, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Wei Wu, Jonathan Cobb, Young-Mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 6154, 61541D (2006) https://doi.org/10.1117/12.659390

KEYWORDS: Photomasks, Polarization, Etching, Plasma etching, Manufacturing, Plasma, Semiconducting wafers, Chromium, Lithography, Chlorine

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Proceedings Article | 9 November 2005 Paper

Mask design rules (45 nm): time for standardization

Mark Mason, Christopher Progler, Patrick Martin, Young-Mog Ham, Brian Dillon, Robert Pack, Mitch Heins, John Gookassian, John Garcia, Victor Boksha

Proceedings Volume 5992, 59920D (2005) https://doi.org/10.1117/12.633180

KEYWORDS: Photomasks, Manufacturing, Resolution enhancement technologies, Data modeling, Model-based design, Databases, Inspection, Optical proximity correction, Semiconducting wafers, Design for manufacturing

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Time-to-mask (ttm) has been growing exponentially in the subwavelength era with the increased application of advanced RET's (Resolution Enhancement Technology). Not only are a greater number of design/mask layers impacted but more-and-more layers also have more severe restrictions on critical dimension uniformity (CDU) despite operating at a very low k₁ factors necessitating rigorous but practical tolerancing. Furthermore, designs are also more complex, may be built up from blocks spanning different design styles, and occupy increasingly-large Rayleigh field areas. Given these factors and scales, it's no wonder that the cycle time for verification of a design following RET, is growing however it is doing so exponentially and that this is a critical factor impeding ttm. Until an unambiguously interprable and standard Mask Design Rule (MaskDR) set is created, neither the designer nor the mask supplier can reliably verify manufacturability of the mask for the simple reason that ambiguity and inter-rule conflict are at the source of the problem and that the problem increasingly requires cooperation spanning a large ecosystem of tool, IP, and mask suppliers all needing to essentially speak the same language. Since the 130 nm node, Texas Instruments has enforced a strict set of mask rule checks (MRCs) in their mask data preparation (MDP) flow based on MaskDRs negotiated with their mask suppliers. The purpose of this effort has been to provide an a-priori guarantee that the data shipped to the mask shop can be used to manufacture a mask reliably and with high yield both from a mask standpoint and from the silicon standpoint. As has been reported earlier, mask manufacturing rules are usually determined from assumed or experimentally acquired/validated mask-manufacturing limits. These rules are then applied during RET/MDP data treatment to guide and/or limit pattern correction strategies. With increasing RET and low-k₁ lithography challenges, the importance of MRCs compounds. Furthermore, it will be necessary to comprehend certain MRC restrictions in the design flow as well as in the RET and MDP space. While mask tool manufacturers will need to be able specify tools specifications relevant to the MRCs for a particular mask shop flow, software tool suppliers, such as for RET, need to do so as well with tools which comprehend, check for, and enforce MRCs consistently. IDMs, foundaries, mask shops, EDA companies and tool suppliers will need a common language for the discussion on MaskDRs and MRCs in order to reach unambiguous convergence. Experience at Texas Instruments shows that accurate description, specification, and interpretation of MaskDRs and applying the associated MRCs is critical to a successful advanced mask technology strategy. This paper proposes the creation of a standard MaskDR lexicon. The goal of such a lexicon is the standardization of MaskDRs and their definitions such that interested parties from various mask-related disciplines can discuss, negotiate, specify, test and enforce MaskDRs unambiguously. We further propose that this standard be machine readable and directly usable without the necessity for intermediate interpretations. This lexicon would allow the designers, IDMs, foundaries, mask suppliers, and equipment suppliers to unambiguously negotiate and agree upon mask manufacturability requirements for their particular application.

Proceedings Article | 9 November 2005 Paper

A films based approach to intensity imbalance correction for 65nm node c:PSM

Rand Cottle, Pierre Sixt, Matt Lassiter, Marc Cangemi, Patrick Martin, Chris Progler

Proceedings Volume 5992, 59920J (2005) https://doi.org/10.1117/12.632214

KEYWORDS: Etching, Photomasks, Reticles, Manufacturing, Wet etching, Silica, Lithography, Resolution enhancement technologies, Scattering, Chromium

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Proceedings Article | 8 November 2005 Paper

Manufacturability study of masks created by inverse lithography technology (ILT)

Patrick Martin, C. Progler, G. Xiao, R. Gray, L. Pang, Y. Liu

Proceedings Volume 5992, 599235 (2005) https://doi.org/10.1117/12.633200

KEYWORDS: Photomasks, Inspection, Manufacturing, Optical proximity correction, Lithography, Semiconducting wafers, Imaging systems, Metrology, Resolution enhancement technologies, Binary data

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Proceedings Article | 5 November 2005 Paper

The impact of mask birefringence on hyper-NA (NA>1.0) polarized imaging

Bernd Geh, Donis Flagello, Chris Progler, Patrick Martin, Leonardus Leunissen, Steve Hansen, Wim de Boeij

Proceedings Volume 5992, 599210 (2005) https://doi.org/10.1117/12.637483

KEYWORDS: Birefringence, Photomasks, Polarization, Critical dimension metrology, Pellicles, Reticles, Silica, Semiconducting wafers, Lithography, Optical lithography

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SPIE Journal Paper | 1 July 2005 Open Access

Editorial: Polarization and Hyper-NA Lithography

Donis Flagello, Christopher Progler

JM3, Vol. 4, Issue 03, 031101, (July 2005) https://doi.org/10.1117/12.10.1117/1.2044807

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Proceedings Article | 28 June 2005 Paper

Interaction and balance of mask write time and design RET strategies

Yuan Zhang, Rick Gray, O. Nakagawa, Puneet Gupta, Henry Kamberian, Guangming Xiao, Rand Cottle, Chris Progler

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617146

KEYWORDS: Molybdenum, Source mask optimization, Computed tomography, Photomasks, Resolution enhancement technologies, Design for manufacturing, Optical proximity correction, Error analysis, Statistical analysis, Lithography

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Proceedings Article | 28 June 2005 Paper

Exploring new high speed mask aware RET verification flows

Patrick Martin, Christopher Progler, Young-mog Ham, Bryan Kasprowicz, Rick Gray, James Wiley, Zongchang Yu, Jun Ye

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617366

KEYWORDS: Resolution enhancement technologies, Photomasks, Optical proximity correction, Lithography, Manufacturing, Computer simulations, Semiconducting wafers, Inspection, Data modeling, Optical lithography

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