Process margin improvement using custom transmission EAPSM reticles

J. Buntin; S. Agarwal; B. Rolfson; R. Housley; B. Baggenstoss; E. Byers; C. Progler

doi:10.1117/12.712368

26 March 2007 Process margin improvement using custom transmission EAPSM reticles

J. Buntin, S. Agarwal, B. Rolfson, R. Housley, B. Baggenstoss, E. Byers, C. Progler

Proceedings Volume 6520, Optical Microlithography XX; 65202D (2007) https://doi.org/10.1117/12.712368
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Low k₁ lithography poses a number of challenges to the process development engineer. Although polarization and immersion lithography will allow us to create processes at lower k₁ than previous paradigms allowed, the lithographer will quickly be looking for Resolution Enhancement Techniques (RET) to push to the ultra-low k₁ regime, or to extend older generation tools and avoid the aforementioned expensive options. Reticle transmission is a RET that can enable a low k₁ process by increasing image contrast. With work performed in conjunction with our MP Mask facility, we have been able to obtain custom-transmission EAPSM reticles. Reticle transmission optimization can be carried out through simulation. Optimum transmission varies depending on optical parameters and feature size. Moreover, when working with 2D patterns, reticle transmission can be optimized for weaker features, without significantly sacrificing image contrast on primary features. Process improvement by optimizing reticle transmission will be explored for a variety of device types using both 248nm and 193nm lithography. Simulation, custom-transmission reticle fabrication, and empirical wafer results will be presented.

Citation Download Citation

J. Buntin, S. Agarwal, B. Rolfson, R. Housley, B. Baggenstoss, E. Byers, and C. Progler "Process margin improvement using custom transmission EAPSM reticles", Proc. SPIE 6520, Optical Microlithography XX, 65202D (26 March 2007); https://doi.org/10.1117/12.712368

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