Low k1 lithography poses a number of challenges to the process development engineer. Although polarization and
immersion lithography will allow us to create processes at lower k1 than previous paradigms allowed, the lithographer
will quickly be looking for Resolution Enhancement Techniques (RET) to push to the ultra-low k1 regime, or to extend
older generation tools and avoid the aforementioned expensive options. Reticle transmission is a RET that can enable a
low k1 process by increasing image contrast. With work performed in conjunction with our MP Mask facility, we have
been able to obtain custom-transmission EAPSM reticles. Reticle transmission optimization can be carried out through
simulation. Optimum transmission varies depending on optical parameters and feature size. Moreover, when working
with 2D patterns, reticle transmission can be optimized for weaker features, without significantly sacrificing image
contrast on primary features.
Process improvement by optimizing reticle transmission will be explored for a variety of device types using both 248nm
and 193nm lithography. Simulation, custom-transmission reticle fabrication, and empirical wafer results will be
presented.
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