32 nm imprint masks using variable shape beam pattern generators

Kosta Selinidis; Ecron Thompson; Gerard Schmid; Nick Stacey; Joseph Perez; John Maltabes; Douglas J. Resnick; Jeongho Yeo; Hoyeon Kim; Ben Eynon

doi:10.1117/12.793034

19 May 2008 32 nm imprint masks using variable shape beam pattern generators

Kosta Selinidis, Ecron Thompson, Gerard Schmid, Nick Stacey, Joseph Perez, John Maltabes, Douglas J. Resnick, Jeongho Yeo, Hoyeon Kim, Ben Eynon

Author Affiliations +

Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70280R (2008) https://doi.org/10.1117/12.793034
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan

Abstract

Imprint lithography has been included on the ITRS Lithography Roadmap at the 32, 22 and 16 nm nodes. Step and Flash Imprint Lithography (S-FIL ®) is a unique method that has been designed from the beginning to enable precise overlay for creating multilevel devices. A photocurable low viscosity monomer is dispensed dropwise to meet the pattern density requirements of the device, thus enabling imprint patterning with a uniform residual layer across a field and across entire wafers. Further, S-FIL provides sub-100 nm feature resolution without the significant expense of multi-element, high quality projection optics or advanced illumination sources. However, since the technology is 1X, it is critical to address the infrastructure associated with the fabrication of templates. For sub-32 nm device manufacturing, one of the major technical challenges remains the fabrication of full-field 1x templates with commercially viable write times. Recent progress in the writing of sub-40 nm patterns using commercial variable shape e-beam tools and non-chemically amplified resists has demonstrated a very promising route to realizing these objectives, and in doing so, has considerably strengthened imprint lithography as a competitive manufacturing technology for the sub 32nm node. Here we report the first imprinting results from sub-40 nm full-field patterns, using Samsung's current flash memory production device design. The fabrication of the template is discussed and the resulting critical dimension control and uniformity are discussed, along with image placement results. The imprinting results are described in terms of CD uniformity, etch results, and overlay.

Citation Download Citation

Kosta Selinidis, Ecron Thompson, Gerard Schmid, Nick Stacey, Joseph Perez, John Maltabes, Douglas J. Resnick, Jeongho Yeo, Hoyeon Kim, and Ben Eynon "32 nm imprint masks using variable shape beam pattern generators", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70280R (19 May 2008); https://doi.org/10.1117/12.793034

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