Mr. Kosta S. Selinidis Profile

Kosta S. Selinidis

ILT,OPC,RET Corporate Applications Enineer, Staff at Synopsys Inc

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Author

Publications (22)

Proceedings Article | 5 April 2019 Presentation + Paper

EUV mask synthesis with rigorous ILT for process window improvement

Kyle Braam, Kosta Selinidis, Wolfgang Hoppe, Hongyuan Cai, Guangming Xiao

Proceedings Volume 10962, 109620P (2019) https://doi.org/10.1117/12.2515156

KEYWORDS: Extreme ultraviolet, Photomasks, Stochastic processes, Lithography, Extreme ultraviolet lithography, 3D modeling, Optical lithography, Manufacturing, EUV optics, Electromagnetism

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Proceedings Article | 20 March 2018 Paper

Rigorous ILT optimization for advanced patterning and design-process co-optimization

Kosta Selinidis, Bernd Kuechler, Howard Cai, Kyle Braam, Wolfgang Hoppe, Vitaly Domnenko, Amyn Poonawala, Guangming Xiao

Proceedings Volume 10587, 105870M (2018) https://doi.org/10.1117/12.2299375

KEYWORDS: Photomasks, Lithography, Optical lithography, 3D modeling, Optical proximity correction, Calibration, Photoresist processing, Manufacturing, Computer simulations, Source mask optimization

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Proceedings Article | 24 March 2017 Presentation + Paper

Resist 3D aware mask solution with ILT for hotspot repair

Kosta Selinidis, Wolfgang Hoppe, Thomas Schmoeller, Thuc Dam, Kevin Hooker, Guangming Xiao

Proceedings Volume 10147, 101470Q (2017) https://doi.org/10.1117/12.2257962

KEYWORDS: 3D modeling, Optical proximity correction, Optical lithography, Data modeling, Computational lithography, Optimization (mathematics), Photoresist processing, Source mask optimization, Scanning electron microscopy

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Proceedings Article | 14 October 2011 Paper

Mask replication using jet and flash imprint lithography

Kosta Selinidis, Chris Jones, Gary Doyle, Laura Brown, Joseph Imhof, Dwayne LaBrake, Douglas Resnick, S. Sreenivasan

Proceedings Volume 8166, 816627 (2011) https://doi.org/10.1117/12.898865

KEYWORDS: Photomasks, Chromium, Etching, Lithography, Semiconductors, Semiconducting wafers, Particles, Optical lithography, Optical alignment, Inspection

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SPIE Journal Paper | 1 October 2011

Mask replication using jet and flash imprint lithography

Kosta Selinidis, Cynthia Brooks, Gary Doyle, Laura Brown, Chris Jones, Joseph Imhof, Dwayne LaBrake, Douglas Resnick, S. Sreenivasan

JM3, Vol. 10, Issue 04, 043005, (October 2011) https://doi.org/10.1117/12.10.1117/1.3646523

KEYWORDS: Photomasks, Chromium, Lithography, Etching, Electron beam lithography, Semiconductors, Semiconducting wafers, Inspection, Optical alignment, Silica

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Proceedings Article | 2 April 2011 Paper

Progress in mask replication using jet and flash imprint lithography

Kosta Selinidis, Cynthia Brooks, Gary Doyle, Laura Brown, Chris Jones, Joseph Imhof, Dwayne LaBrake, Douglas Resnick, S.V. Sreenivasan

Proceedings Volume 7970, 797009 (2011) https://doi.org/10.1117/12.881647

KEYWORDS: Photomasks, Etching, Chromium, Lithography, Semiconductors, Inspection, Semiconducting wafers, Silica, Electron beam lithography, Optical alignment

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The Jet and Flash Imprint Lithography (J-FIL^TM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 10⁴ - 10⁵imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and processes specifically for semiconductor applications. The requirements needed for semiconductors dictate the need for a well defined form factor for both master and replica masks which is also compatible with the existing mask infrastructure established for the 6025 semi standard, 6" x 6" x 0.25" photomasks. Complying with this standard provides the necessary tooling needed for mask fabrication processes, cleaning, metrology, and inspection. The replica form factor has additional features specific to imprinting such as a pre-patterned mesa. A Perfecta^TM MR5000 mask replication tool has been developed specifically to pattern replica masks from an e-beam written master. The system specifications include a throughput of four replicas per hour with an added image placement component of 5nm, 3sigma and a critical dimension uniformity error of less than 1nm, 3sigma. A new process has been developed to fabricate replicas with high contrast alignment marks so that designs for imprint can fit within current device layouts and maximize the usable printed area on the wafer. Initial performance results of this marks are comparable to the baseline fused silica align marks.

Proceedings Article | 25 September 2010 Paper

Development of template and mask replication using jet and flash imprint lithography

Cynthia Brooks, Kosta Selinidis, Gary Doyle, Laura Brown, Dwayne LaBrake, Douglas Resnick, S. V. Sreenivasan

Proceedings Volume 7823, 78230O (2010) https://doi.org/10.1117/12.864332

KEYWORDS: Photomasks, Etching, Lithography, Semiconductors, Critical dimension metrology, Optical lithography, Inspection, Reactive ion etching, Silica, Chemistry

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SPIE Journal Paper | 1 July 2010

Cleaning of step-and-flash imprint masks with damage-free nonacid technology

Sherjang Singh, Ssuwei Chen, Kosta Selinidis, Brian Fletcher, Ian McMackin, Ecron Thompson, Douglas Resnick, Peter Dress, Uwe Dietze

JM3, Vol. 9, Issue 03, 033003, (July 2010) https://doi.org/10.1117/12.10.1117/1.3462815

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Proceedings Article | 1 April 2010 Paper

Inspection of imprint lithography patterns for semiconductor and patterned media

Douglas Resnick, Gaddi Haase, Lovejeet Singh, David Curran, Gerard Schmid, Kang Luo, Cindy Brooks, Kosta Selinidis, John Fretwell, S. Sreenivasan

Proceedings Volume 7637, 76370R (2010) https://doi.org/10.1117/12.848391

KEYWORDS: Inspection, Photomasks, Lithography, Particles, Semiconducting wafers, Defect detection, Semiconductors, Optical inspection, Servomechanisms, Defect inspection

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Proceedings Article | 23 September 2009 Paper

High-resolution e-beam repair for nanoimprint templates

Marcus Pritschow, Harald Dobberstein, Klaus Edinger, Mathias Irmscher, Douglas Resnick, Kosta Selinidis, Ecron Thompson, Markus Waiblinger

Proceedings Volume 7488, 74880V (2009) https://doi.org/10.1117/12.833030

KEYWORDS: Scanning electron microscopy, Etching, Electron beams, Semiconducting wafers, Metals, Manufacturing, Silicon, Nanoimprint lithography, Photomasks, Ultraviolet radiation

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Proceedings Article | 23 September 2009 Paper

Inspection of 32nm imprinted patterns with an advanced e-beam inspection system

Hong Xiao, Long Ma, Fei Wang, Yan Zhao, Jack Jau, Kosta Selinidis, Ecron Thompson, S. V. Sreenivasan, Douglas Resnick

Proceedings Volume 7488, 74881V (2009) https://doi.org/10.1117/12.833419

KEYWORDS: Inspection, Photomasks, Nanoimprint lithography, Electron beam lithography, Semiconducting wafers, Lithography, Defect inspection, Dysprosium, Scanning electron microscopy, Optical lithography

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Proceedings Article | 27 May 2009 Paper

Electron beam inspection methods for imprint lithography at 32 nm

Kosta Selinidis, Ecron Thompson, S. Sreenivasan, Douglas Resnick

Proceedings Volume 7470, 74700I (2009) https://doi.org/10.1117/12.835180

KEYWORDS: Photomasks, Inspection, Lithography, Metals, Scanning electron microscopy, Semiconducting wafers, Electron beam lithography, Wafer inspection, Defect detection, Image segmentation

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Proceedings Article | 11 May 2009 Paper

Inspection and repair for imprint lithography at 32 nm and below

Kosta Selinidis, Ecron Thompson, S. Sreenivasan, Douglas Resnick, Marcus Pritschow, Joerg Butschke, Mathias Irmscher, Holger Sailer, Harald Dobberstein

Proceedings Volume 7379, 73790N (2009) https://doi.org/10.1117/12.824264

KEYWORDS: Photomasks, Inspection, Metals, Defect detection, Lithography, Semiconducting wafers, Scanning electron microscopy, Ultraviolet radiation, Electron beams, Image segmentation

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Proceedings Article | 18 March 2009 Paper

High-resolution defect inspection of step-and-flash imprint lithography for 32-nm half-pitch patterning

Kosta Selinidis, Ecron Thompson, Ian McMackin, S.V. Sreenivasan, Douglas Resnick

Proceedings Volume 7271, 72711W (2009) https://doi.org/10.1117/12.815014

KEYWORDS: Photomasks, Inspection, Metals, Semiconducting wafers, Scanning electron microscopy, Defect detection, Lithography, Electron beam lithography, Defect inspection, Wafer inspection

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Proceedings Article | 18 March 2009 Paper

Automated imprint mask cleaning for step-and-flash imprint lithography

Sherjang Singh, Ssuwei Chen, Kosta Selinidis, Brian Fletcher, Ian McMackin, Ecron Thompson, Douglas Resnick, Peter Dress, Uwe Dietze

Proceedings Volume 7271, 72712H (2009) https://doi.org/10.1117/12.814290

KEYWORDS: Photomasks, Particles, Mask cleaning, Inspection, Lithography, Scanning electron microscopy, Photoresist processing, Nanoimprint lithography, Contamination, Semiconducting wafers

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Proceedings Article | 17 October 2008 Paper

Defect inspection of imprinted 32 nm half pitch patterns

Kosta Selinidis, Ecron Thompson, Ian McMackin, Joseph Perez, S. V. Sreenivasan, Douglas Resnick

Proceedings Volume 7122, 71222K (2008) https://doi.org/10.1117/12.801948

KEYWORDS: Photomasks, Inspection, Metals, Lithography, Semiconducting wafers, Scanning electron microscopy, Defect inspection, Etching, Image segmentation, Ultraviolet radiation

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Proceedings Article | 17 October 2008 Paper

Evaluation of e-beam repair for nanoimprint templates

Marcus Pritschow, Volker Boegli, Joerg Butschke, Mathias Irmscher, Douglas Resnick, Holger Sailer, Kosta Selinidis, Ecron Thompson

Proceedings Volume 7122, 71222L (2008) https://doi.org/10.1117/12.801946

KEYWORDS: Etching, Quartz, Photomasks, Nanoimprint lithography, Opacity, Inspection, Ultraviolet radiation, Scanning electron microscopy, Phase shifts, Silicon

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Proceedings Article | 19 May 2008 Paper

32 nm imprint masks using variable shape beam pattern generators

Kosta Selinidis, Ecron Thompson, Gerard Schmid, Nick Stacey, Joseph Perez, John Maltabes, Douglas Resnick, Jeongho Yeo, Hoyeon Kim, Ben Eynon

Proceedings Volume 7028, 70280R (2008) https://doi.org/10.1117/12.793034

KEYWORDS: Semiconducting wafers, Line width roughness, Lithography, Etching, Photomasks, Critical dimension metrology, Beam shaping, Overlay metrology, Manufacturing, Line edge roughness

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Proceedings Article | 21 March 2008 Paper

High resolution defect inspection of step and flash imprint lithography for 32 nm half-pitch patterning

I. McMackin, J. Perez, K. Selinidis, J. Maltabes, D. Resnick, S. Sreenivassan

Proceedings Volume 6921, 69211L (2008) https://doi.org/10.1117/12.773970

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Particles, Lithography, Defect inspection, Etching, Optical lithography, Image processing, Manufacturing

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Proceedings Article | 16 November 2007 Paper

Defect reduction progress in step and flash imprint lithography

K. Selenidis, J. Maltabes, I. McMackin, J. Perez, W. Martin, D. Resnick, S. Sreenivasan

Proceedings Volume 6730, 67300F (2007) https://doi.org/10.1117/12.747565

KEYWORDS: Inspection, Semiconducting wafers, Lithography, Particles, Defect inspection, Ultraviolet radiation, Contamination, Ions, Image processing, Wafer inspection

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Proceedings Article | 21 March 2007 Paper

A study of imprint-specific defects in the step and flash imprint lithography process

J. Perez, K. Selinidis, S. Johnson, B. Fletcher, F. Xu, J. Maltabes, I. McMackin, D. Resnick, S. Sreenivasan

Proceedings Volume 6517, 65170L (2007) https://doi.org/10.1117/12.720673

KEYWORDS: Particles, Inspection, Lithography, Semiconducting wafers, Manufacturing, Photomasks, Optical lithography, Ultraviolet radiation, Defect detection, Silica

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Researchers have demonstrated that imprint lithography techniques have remarkable replication resolution and can pattern sub-5nm structures. However, a fully capable lithography approach needs to address several challenges in order to be useful in manufacturing. For successful manufacturing insertion of Step and Flash Imprint Lithography (S-FILTM) into a broad set of applications such as photonics, magnetic storage, and integrated circuits (ICs), the following practical process related challenges need to be addressed: (i) Printing sub-50nm structures with non-uniform pattern densities: (ii) Precise alignment and overlay with the ability to mix-and-match with photolithography; (iii) Availability of 1X templates; (iv) Achieving appropriate throughput for acceptable cost of ownership; and (v) Minimizing template and imprint process-induced defects to allow acceptable process yields. The last challenge - the ability to achieve low defect densities - is desirable for all applications. However, it is one of the biggest challenges for S-FIL to be accepted in IC fabrication. This article specifically focuses on this last challenge and presents the current status of defect reduction in S-FIL technology. The article starts out by providing a brief background of S-FIL technology, and by including a discussion of the overall status of S-FIL technology in Section 1. Next, an overview of the experiments performed including the defect inspection approaches used is provided in Section 2. Section 3 introduces the classes of defects that are relevant to the S-FIL process. It also provides recent defect data for each of these classes. Section 4 presents defect data gathered over the last three years and provides defect reduction trends over this period. Section 5 discusses the topic of template lifetime. Finally Section 6 provides some concluding remarks. The defect data presented here is based on a large number of short-loop experiments based on optical inspection of templates and wafers; these data are complemented by a modest number of high resolution e-beam inspections to provide insight into S-FIL specific defects at leading edge line widths.

Proceedings Article | 23 March 2006 Paper

Increasing effective resolution through surface conditioners for 1x imprint templates and photo mask applications beyond 65nm

Kosta Selinidis, John Maltabes, Madhukar Rao, Peng Zhang

Proceedings Volume 6151, 615114 (2006) https://doi.org/10.1117/12.657620

KEYWORDS: Photomasks, Photoresist processing, Etching, Manufacturing, Resolution enhancement technologies, Capillaries, Lithography, Semiconducting wafers, Mask making, Liquids

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Showing 5 of 22 publications

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