EUV mask inspection with 193 nm inspector for 32 and 22 nm HP

Daniel Wack; Qiang Q. Zhang; Gregg Inderhees; Dan Lopez

doi:10.1117/12.864093

25 May 2010 EUV mask inspection with 193 nm inspector for 32 and 22 nm HP

Daniel Wack, Qiang Q. Zhang, Gregg Inderhees, Dan Lopez

Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 77481Y (2010) https://doi.org/10.1117/12.864093
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan

Abstract

Reticle quality and the capability to qualify a reticle are key issues for EUV Lithography. We expect current and planned optical inspection systems will provide inspection capability adequate for development and production of 2X HP masks. We illustrate inspection technology extendibility through simulation of 193nm-based inspection of advanced EUV patterned masks. The influence of EUV absorber design for 193nm optical contrast and defect sensitivity will be identified for absorber designs of current interest.

Citation Download Citation

Daniel Wack, Qiang Q. Zhang, Gregg Inderhees, and Dan Lopez "EUV mask inspection with 193 nm inspector for 32 and 22 nm HP", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 77481Y (25 May 2010); https://doi.org/10.1117/12.864093

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