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As device features continue to shrink, achieving acceptable yields becomes increasingly challenging. In the photolithography process, mask error is one of the most critical error sources, since any imperfections on a mask will be amplified and transferred onto a wafer due to Mask Error Enhancement Factor (MEEF) [1]. Furthermore, due to complexity of lithography optical proximity effect correction in advanced technology nodes, more and more 2D structures are applied into mask patterns. Furthermore, more 2D pattern configurations are susceptible to pattering failures due to their much high MEEF factor than 1D pattern. As a result, the conventional mask error control mechanisms for 1D [2] [3] [4] only, such as mean-to-target (MTT) and CD uniformity, are no longer adequate to deal with high MEEF 2D structures. In this paper, a novel 2D structure mask error monitoring technique is introduced to prevent fatal wafer printing errors such as CD error, line-end pull back and other pattern distortions to ensure high quality mask manufacturing and to improve wafer yield in advanced technology nodes. We will demonstrate the flow using typical 2D structure test patterns in 28nm technology node design or beyond. The SEM image would be taken and measured by this novel technique are used to monitor mask fidelity performance. This monitoring technique is based on Image-to-layout, as one of Anchor Semiconductor’s pattern centric techniques, which can extract contour and convert it into pattern layouts from SEM or optical image of masks. Further pattern signature analysis can be performed on the pattern (inner /outer vertex, space distance and edge distance), so that we can quickly identify target locations for 2D pattern measurements. We monitor the severity of 2D corner rounding on selected 28nm design rule masks by Pattern Fidelity (PF) ratio and correlate them with wafer printing results. 2D pattern measurement techniques and PF ratio monitoring system from SEM image is an effective approach to ensure high quality mask making in 28nm and advanced technology nodes. This PF ratio monitoring from 2D pattern SEM images is an effective approach to ensure high quality mask making in advanced 28nm node and beyond, which can overcome the inadequacy of current 1D measurement only method, especially for the masks are generated without source mask optimization (SMO) [6].
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