The use of trivalent erbium, typically embedded in solid state, has widespread adoption as a dopant in telecommunications devices. and shows promise for on-chip nanolasers and spin-based quantum memories for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface make it ideal for integration into existing optical fiber networks without the need for frequency conversion. Here, we present Er-doped titanium dioxide thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of doping control over the Er concentration for integrated photonics applications. Finally, we coupled Er ensembles with high quality factor Si nanophotonic cavities and demonstrate a large Purcell enhancement (about 300) of their optical lifetime. Our findings demonstrate a low-temperature, non-destructive, and substrate-independent process for integrating Er-doped materials with silicon photonics, which can be widely applied in integrated photonics industry and in developing on-chip quantum memories.
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