Presentation
13 March 2024 Nano-cavity mediated Purcell enhancement of Er in TiO2 thin films grown via atomic layer deposition
Author Affiliations +
Abstract
The use of trivalent erbium, typically embedded in solid state, has widespread adoption as a dopant in telecommunications devices. and shows promise for on-chip nanolasers and spin-based quantum memories for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface make it ideal for integration into existing optical fiber networks without the need for frequency conversion. Here, we present Er-doped titanium dioxide thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of doping control over the Er concentration for integrated photonics applications. Finally, we coupled Er ensembles with high quality factor Si nanophotonic cavities and demonstrate a large Purcell enhancement (about 300) of their optical lifetime. Our findings demonstrate a low-temperature, non-destructive, and substrate-independent process for integrating Er-doped materials with silicon photonics, which can be widely applied in integrated photonics industry and in developing on-chip quantum memories.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cheng Ji, Michael T. Solomon, Gregory D. Grant, Koichi Tanaka, Muchuan Hua, Jianguo Wen, Alan M. Dibos, and Supratik Guha "Nano-cavity mediated Purcell enhancement of Er in TiO2 thin films grown via atomic layer deposition", Proc. SPIE PC12911, Quantum Computing, Communication, and Simulation IV, PC129111B (13 March 2024); https://doi.org/10.1117/12.3014142
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KEYWORDS
Atomic layer deposition

Thin films

Erbium

Thin film growth

Titanium dioxide

Doping

Quantum enhancement

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